VIRTUAL PLASMA EQUIPMENT MODEL - A TOOL FOR INVESTIGATING FEEDBACK-CONTROL IN PLASMA PROCESSING EQUIPMENT

Authors
Citation
S. Rauf et Mj. Kushner, VIRTUAL PLASMA EQUIPMENT MODEL - A TOOL FOR INVESTIGATING FEEDBACK-CONTROL IN PLASMA PROCESSING EQUIPMENT, IEEE transactions on semiconductor manufacturing, 11(3), 1998, pp. 486-494
Citations number
21
Categorie Soggetti
Engineering, Eletrical & Electronic","Engineering, Manufacturing","Physics, Applied
ISSN journal
08946507
Volume
11
Issue
3
Year of publication
1998
Pages
486 - 494
Database
ISI
SICI code
0894-6507(1998)11:3<486:VPEM-A>2.0.ZU;2-6
Abstract
As microelectronics device feature sizes continue to shrink and wafers continue to increase in size, it is necessary to have tighter toleran ces during the fabrication process to maintain high yields. Feedback c ontrol has, therefore, become an important issue in plasma processing equipment design. Comprehensive plasma equipment models linked to cont rol algorithms would greatly aid in the investigation and optimal sele ction of control strategies, This paper reports on a numerical plasma simulation tool, the Virtual Plasma Equipment Model (VPEM), which addr esses this need to test feedback control strategies and algorithms on plasma processing equipment. The VPEM is an extension of the Hybrid Pl asma Equipment Model which has been augmented by sensors and actuators , linked together through a programmable controller. The sensors emula te experimental measurements of species densities, fluxes, and energie s, while the actuators change process parameters such as pressure, ind uctive power, capacitive power, electrode voltages, and mole fraction of gases. Controllers were designed using a response surface based met hodology. Results are presented from studies in which these controller s were used to compensate for a leak of N-2 into an Ar discharge, to s tably control drifts in process parameters such as pressure and power in Ar and Ar/Cl-2, and to nullify the effects of long term changes in wall conditions in Cl-2 containing plasmas. A new strategy for improvi ng the ion energy flux uniformity in capacitively coupled discharges u sing feedback control techniques is also explored.