S. Rauf et Mj. Kushner, VIRTUAL PLASMA EQUIPMENT MODEL - A TOOL FOR INVESTIGATING FEEDBACK-CONTROL IN PLASMA PROCESSING EQUIPMENT, IEEE transactions on semiconductor manufacturing, 11(3), 1998, pp. 486-494
As microelectronics device feature sizes continue to shrink and wafers
continue to increase in size, it is necessary to have tighter toleran
ces during the fabrication process to maintain high yields. Feedback c
ontrol has, therefore, become an important issue in plasma processing
equipment design. Comprehensive plasma equipment models linked to cont
rol algorithms would greatly aid in the investigation and optimal sele
ction of control strategies, This paper reports on a numerical plasma
simulation tool, the Virtual Plasma Equipment Model (VPEM), which addr
esses this need to test feedback control strategies and algorithms on
plasma processing equipment. The VPEM is an extension of the Hybrid Pl
asma Equipment Model which has been augmented by sensors and actuators
, linked together through a programmable controller. The sensors emula
te experimental measurements of species densities, fluxes, and energie
s, while the actuators change process parameters such as pressure, ind
uctive power, capacitive power, electrode voltages, and mole fraction
of gases. Controllers were designed using a response surface based met
hodology. Results are presented from studies in which these controller
s were used to compensate for a leak of N-2 into an Ar discharge, to s
tably control drifts in process parameters such as pressure and power
in Ar and Ar/Cl-2, and to nullify the effects of long term changes in
wall conditions in Cl-2 containing plasmas. A new strategy for improvi
ng the ion energy flux uniformity in capacitively coupled discharges u
sing feedback control techniques is also explored.