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Results: 1-25 | 26-27 |
Results: 26-27/27
CHARACTERISTICS OF THE GROWTH OF SILICON- CARBIDE EPITAXIAL LAYERS FROM GAS-PHASE PRODUCED BY MAGNETOTRON REACTIVE SPUTTERING
Authors: ROGACHEV NA KUZNETSOV AN TERUKOV EI LEBEDEV AA CHELNOKOV VE
Citation: Na. Rogachev et al., CHARACTERISTICS OF THE GROWTH OF SILICON- CARBIDE EPITAXIAL LAYERS FROM GAS-PHASE PRODUCED BY MAGNETOTRON REACTIVE SPUTTERING, Pis'ma v Zurnal tehniceskoj fiziki, 20(7), 1994, pp. 51-54
OHMIC CONTACTS TO SIC-6H OF N-TYPE CONDUC TIVITY BASED SIC THIN-FILMSDEPOSITED BY THE MAGNETOTRON SPUTTERING TECHNIQUE
Authors: ANDREEV AN BABANIN AI KUZNETSOV AN RASTEGAEVA MG TERUKOV EI CHELNOKOV VE SHCHEGLOV MP
Citation: An. Andreev et al., OHMIC CONTACTS TO SIC-6H OF N-TYPE CONDUC TIVITY BASED SIC THIN-FILMSDEPOSITED BY THE MAGNETOTRON SPUTTERING TECHNIQUE, Pis'ma v Zurnal tehniceskoj fiziki, 20(18), 1994, pp. 11-15
Risultati: 1-25 | 26-27 |