Citation: Js. Kwak et al., IMPROVED UNIFORMITY OF CONTACT RESISTANCE IN GAAS-MESFET USING PD GE/TI/AU OHMIC CONTACTS/, IEEE electron device letters, 19(12), 1998, pp. 481-483
Citation: Sy. Kim et al., THE PROTECTION OF THE RETINA FROM ISCHEMIC-INJURY BY THE FREE-RADICALSCAVENGER EGB-761 AND ZINC IN THE CAT RETINA, Ophthalmologica, 212(4), 1998, pp. 268-274
Citation: Js. Kwak et al., IMPROVEMENT OF TA DIFFUSION BARRIER PERFORMANCE IN CU METALLIZATION BY INSERTION OF A THIN ZR LAYER INTO TA FILM, Applied physics letters, 72(22), 1998, pp. 2832-2834
Citation: Js. Kwak et al., PD-GE-AU BASED HYBRID OHMIC CONTACTS TO HIGH-LOW DOPED GAAS FIELD-EFFECT TRANSISTOR, JPN J A P 1, 36(9A), 1997, pp. 5451-5458
Authors:
KIM DW
KWAK JS
PARK HS
KIM HN
BAIK HK
LEE SM
KIM CS
NOH SK
Citation: Dw. Kim et al., INTERFACIAL REACTION AND ELECTRICAL PROPERTY OF GE NI/ZNSE FOR BLUE LASER-DIODE/, Journal of electronic materials, 26(2), 1997, pp. 83-89
Citation: Gb. Kim et al., INTERFACIAL REACTION AND FORMATION MECHANISM OF EPITAXIAL COSI2 BY RAPID THERMAL ANNEALING IN CO TI/SI(100) SYSTEM/, Journal of applied physics, 82(5), 1997, pp. 2323-2328
Authors:
LEE JL
KIM YT
KWAK JS
BAIK HK
UEDONO A
TANIGAWA S
Citation: Jl. Lee et al., EVIDENCE FOR THE FORMATION OF N(-GAAS LAYER IN PD())GE OHMIC CONTACT TO N-TYPE GAAS/, Journal of applied physics, 82(11), 1997, pp. 5460-5464
Citation: Bs. Kang et al., THE EFFECTIVENESS OF TA PREPARED BY ION-ASSISTED DEPOSITION AS A DIFFUSION BARRIER BETWEEN COPPER AND SILICON, Journal of the Electrochemical Society, 144(5), 1997, pp. 1807-1812
Citation: Js. Kwak et al., SUPPRESSION OF SILICIDE FORMATION IN TA SI SYSTEM BY ION-BEAM-ASSISTED DEPOSITION/, Applied physics letters, 71(17), 1997, pp. 2451-2453
Authors:
KWAK JS
LEE JL
BAIK HK
SHIN DW
PARK CG
KIM H
Citation: Js. Kwak et al., EFFECT OF PENETRATION DEPTH ON ELECTRICAL-PROPERTIES IN PD GE/TI/AU OHMIC CONTACT TO HIGH-LOW-DOPED N-GAAS/, JPN J A P 1, 35(7), 1996, pp. 3841-3844
Authors:
KWAK JS
BAIK HK
LEE JL
PARK CG
KIM H
SUH KS
Citation: Js. Kwak et al., A LOW-RESISTANCE PD GE/TI/AU OHMIC CONTACT TO A HIGH-LOW DOPED GAAS FIELD-EFFECT TRANSISTOR/, Thin solid films, 291, 1996, pp. 497-502
Authors:
KWAK JS
KIM HN
BAIK HK
LEE JL
SHIN DW
PARK CG
KIM H
PYUN KE
Citation: Js. Kwak et al., MICROSTRUCTURAL AND ELECTRICAL INVESTIGATIONS OF PD GE/TI/AU OHMIC CONTACT TO N-TYPE GAAS/, Journal of applied physics, 80(7), 1996, pp. 3904-3909
Citation: Jy. Shim et al., FORMATION OF AMORPHOUS AND CRYSTALLINE PHASES, AND PHASE-TRANSITION BY SOLID-STATE REACTION IN ZR SI MULTILAYER THIN-FILMS/, Thin solid films, 269(1-2), 1995, pp. 102-107
Authors:
KWAK JS
CHI EJ
CHOI JD
PARK SW
BAIK HK
SO MG
LEE SM
Citation: Js. Kwak et al., PREDICTION OF SOLID-STATE AMORPHIZING REACTION USING EFFECTIVE DRIVING-FORCE, Journal of applied physics, 78(2), 1995, pp. 983-987
Authors:
KWAK JS
BAIK HK
SHIN DW
PARK CG
KIM CS
NOH SK
KIM SI
Citation: Js. Kwak et al., THE INTERACTIONS BETWEEN SI CO FILMS AND GAAS(001) SUBSTRATES/, Journal of electronic materials, 23(12), 1994, pp. 1335-1341
Authors:
KIM SH
LEE HS
KIM IT
JUNG BH
CHO JH
KWAK JS
Citation: Sh. Kim et al., EFFICACY OF INTRAVITREAL HEMOCOAGULASE FOR CONTROL OF BLEEDING IN RABBIT EXPERIMENTAL-MODEL OF VITRECTOMY, Japanese Journal of Ophthalmology, 37(4), 1993, pp. 379-384