Authors:
HIRATA A
MACHIDA K
MAEYAMA S
WATANABE Y
KYURAGI H
Citation: A. Hirata et al., DIFFUSION BARRIER MECHANISM OF EXTREMELY THIN TUNGSTEN SILICON-NITRIDE FILM FORMED BY ECR PLASMA NITRIDATION, JPN J A P 1, 37(3B), 1998, pp. 1251-1255
Authors:
MACHIDA K
KYURAGI H
AKIYA H
IMAI K
TOUNAI A
NAKASHIMA A
Citation: K. Machida et al., NOVEL GLOBAL PLANARIZATION TECHNOLOGY FOR INTERLAYER DIELECTRICS USING SPIN ON GLASS-FILM TRANSFER AND HOT-PRESSING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1093-1097
Citation: H. Kyuragi, ROLE OF LOW-ENERGY SECONDARY ELECTRONS IN SYNCHROTRON RADIATION-EXCITED CHEMICAL-VAPOR-DEPOSITION OF SILICON-NITRIDE FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(5), 1997, pp. 2644-2652
Authors:
HIRATA A
HOSOYA T
MACHIDA K
KYURAGI H
AKIYA H
Citation: A. Hirata et al., ELECTRICAL CHARACTERISTICS OF A WSIX CONTACT ELECTRODE WITH A WSIXN DIFFUSION BARRIER FORMED BY USING ELECTRON-CYCLOTRON-RESONANCE PLASMA NITRIDATION, Journal of the Electrochemical Society, 144(11), 1997, pp. 3993-3998
Citation: H. Kyuragi, CHARACTERIZATION OF SILICON-NITRIDE FILMS FORMED BY SYNCHROTRON RADIATION-EXCITED CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3305-3315