NOVEL GLOBAL PLANARIZATION TECHNOLOGY FOR INTERLAYER DIELECTRICS USING SPIN ON GLASS-FILM TRANSFER AND HOT-PRESSING

Global planarization technology based on a new concept comprised of sp in on glass (SOG) film transfer and hot pressing is proposed for inter layer dielectrics. The technology basically involves coating a SOG fil m onto a sheet film in advance and then transferring it from the sheet film to a Si substrate by pressing and heating it in a vacuum. Planar ization and filling of the interlayer dielectrics can be carried out b y this process. For this technology, perhydrosilazane, which has a hig h viscosity for a thick formation during coating and a low viscosity f or the flow during heating, is used as the SOG material. Experimental results show that the SOG thickness is reduced by the pressing and hea ting process and that its uniformity can be improved by the press forc e. By applying this technology to Al interconnection, it is found that planarization and filling can be completely realized. Therefore, this technology is very promising for simple and inexpensive global planar ization. (C) 1998 American Vacuum Society.