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Results: 1-8 |
Results: 8
The role of nitrogen in the formation of luminescent silicon nanoprecipitates during heat treatment of SiO2 layers implanted with Si+ ions
Authors: Kachurin, GA Yanovskaya, SG Zhuravlev, KS Ruault, MO
Citation: Ga. Kachurin et al., The role of nitrogen in the formation of luminescent silicon nanoprecipitates during heat treatment of SiO2 layers implanted with Si+ ions, SEMICONDUCT, 35(10), 2001, pp. 1182-1186
Ellipsometric studies of annealing of SiO2 layers during the formation of light-emitting Si nanocrystals in them
Authors: Khasanov, T Mardezhov, AS Yanovskaya, SG Kachurin, GA Kaitasov, O
Citation: T. Khasanov et al., Ellipsometric studies of annealing of SiO2 layers during the formation of light-emitting Si nanocrystals in them, OPT SPECTRO, 90(6), 2001, pp. 831-834
The influence of irradiation and subsequent annealing on Si nanocrystals formed in SiO2 layers
Authors: Kachurin, GA Yanovskaya, SG Ruault, MO Gutakovskii, AK Zhuravlev, KS Kaitasov, O Bernas, H
Citation: Ga. Kachurin et al., The influence of irradiation and subsequent annealing on Si nanocrystals formed in SiO2 layers, SEMICONDUCT, 34(8), 2000, pp. 965-970
Formation of photoluminescence centers during annealing of SiO2 layers implanted with Ge ions
Authors: Kachurin, GA Rebohle, L Tyschenko, IE Volodin, VA Voelskow, M Skorupa, W Froeb, H
Citation: Ga. Kachurin et al., Formation of photoluminescence centers during annealing of SiO2 layers implanted with Ge ions, SEMICONDUCT, 34(1), 2000, pp. 21-26
Modeling Si nanoprecipitate formation in SiO2 layers with excess Si atoms
Authors: Leier, AF Safronov, LN Kachurin, GA
Citation: Af. Leier et al., Modeling Si nanoprecipitate formation in SiO2 layers with excess Si atoms, SEMICONDUCT, 33(4), 1999, pp. 380-384
Light particle irradiation effects in Si nanocrystals
Authors: Kachurin, GA Ruault, MO Gutakovsky, AK Kaitasov, O Yanovskaya, SG Zhuravlev, KS Bernas, H
Citation: Ga. Kachurin et al., Light particle irradiation effects in Si nanocrystals, NUCL INST B, 147(1-4), 1999, pp. 356-360
Effect of ion dose and annealing mode on photoluminescence from SiO2 implanted with Si ions
Authors: Kachurin, GA Leier, AF Zhuravlev, KS Tyschenko, IE Gutakovskii, AK Volodin, VA Skorupa, W Yankov, RA
Citation: Ga. Kachurin et al., Effect of ion dose and annealing mode on photoluminescence from SiO2 implanted with Si ions, SEMICONDUCT, 32(11), 1998, pp. 1222-1228
The effect of annealing under hydrostatic pressure on the visible photoluminescence from Si+-ion implanted SiO2 films
Authors: Tyschenko, IE Rebohle, L Yankov, RA Skorupa, W Misiuk, A Kachurin, GA
Citation: Ie. Tyschenko et al., The effect of annealing under hydrostatic pressure on the visible photoluminescence from Si+-ion implanted SiO2 films, J LUMINESC, 80(1-4), 1998, pp. 229-233
Risultati: 1-8 |