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Yanovskaya, SG
Zhuravlev, KS
Ruault, MO
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Khasanov, T
Mardezhov, AS
Yanovskaya, SG
Kachurin, GA
Kaitasov, O
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Authors:
Kachurin, GA
Yanovskaya, SG
Ruault, MO
Gutakovskii, AK
Zhuravlev, KS
Kaitasov, O
Bernas, H
Citation: Ga. Kachurin et al., The influence of irradiation and subsequent annealing on Si nanocrystals formed in SiO2 layers, SEMICONDUCT, 34(8), 2000, pp. 965-970
Authors:
Kachurin, GA
Rebohle, L
Tyschenko, IE
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Voelskow, M
Skorupa, W
Froeb, H
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Authors:
Kachurin, GA
Leier, AF
Zhuravlev, KS
Tyschenko, IE
Gutakovskii, AK
Volodin, VA
Skorupa, W
Yankov, RA
Citation: Ga. Kachurin et al., Effect of ion dose and annealing mode on photoluminescence from SiO2 implanted with Si ions, SEMICONDUCT, 32(11), 1998, pp. 1222-1228
Authors:
Tyschenko, IE
Rebohle, L
Yankov, RA
Skorupa, W
Misiuk, A
Kachurin, GA
Citation: Ie. Tyschenko et al., The effect of annealing under hydrostatic pressure on the visible photoluminescence from Si+-ion implanted SiO2 films, J LUMINESC, 80(1-4), 1998, pp. 229-233