Authors: Sachenko, AV Kaganovich, EB Manoilov, EG Svechnikov, SV

Citation: Av. Sachenko et al., Kinetics of exciton photoluminescence in low-dimensional silicon structures, SEMICONDUCT, 35(12), 2001, pp. 1383-1389

Authors: Korsunskaya, NE Kaganovich, EB Khomenkova, LY Bulakh, BM Dzhumaev, BR Beketov, GV Manoilov, EG

Citation: Ne. Korsunskaya et al., Effect of adsorption and desorption processes on photoluminescence excitation spectra of porous silicon, APPL SURF S, 166(1-4), 2000, pp. 349-353

Authors: Kaganovich, EB Manoilov, EG Svechnikov, SV

Citation: Eb. Kaganovich et al., Photosensitive structures based on porous silicon, SEMICONDUCT, 33(3), 1999, pp. 327-331

Authors: Venger, EF Kaganovich, EB Kirillova, SI Manoilov, EG Primachenko, VE Svechnikov, SV

Citation: Ef. Venger et al., Using the temperature-dependent photovoltage to investigate porous silicon/silicon structures, SEMICONDUCT, 33(11), 1999, pp. 1202-1205

Authors: Kaganovich, EB Kudryavtsev, AA Manoilov, EG Svechnikov, SV Indutnyi, IZ

Citation: Eb. Kaganovich et al., Optical properties of Si nanocomposite films prepared by laser ablation, THIN SOL FI, 349(1-2), 1999, pp. 298-302