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Citation: Ip. Soshnikov et al., The formation of developed morphology on the indium phosphide surface by ion argon beam sputtering, TECH PHYS, 46(7), 2001, pp. 892-896

Authors: Soshnikov, IP Lundin, VV Usikov, AS Kalmykova, IP Ledentsov, NN Rosenauer, A Neubauer, B Gerthsen, D

Citation: Ip. Soshnikov et al., Specifics of MOCVD formation of InxGa1-xN inclusions in a GaN matrix, SEMICONDUCT, 34(6), 2000, pp. 621-625