Authors: Yoon, SF Gay, BP Zheng, HQ Kam, AHT

Citation: Sf. Yoon et al., Molecular beam epitaxial growth of high performance In0.48Ga0.52P/In0.20Ga0.80As/GaAs p-HEMTs using a valved phosphorus cracker cell, MAT SCI E B, 74(1-3), 2000, pp. 151-157

Authors: Yoon, SF Kam, AHT Gay, BP Zheng, HQ

Citation: Sf. Yoon et al., A simulation study on pseudomorphic high electron mobility transistors (pHEMT) fabricated using the GaInP/InGaAs material system, SOL ST ELEC, 44(7), 2000, pp. 1267-1274

Authors: Yoon, SF Kam, AHT Gay, BP Zheng, HQ

Citation: Sf. Yoon et al., A simulation study on the DC characteristics of the Ga0.52In0.48P/In0.2Ga0.8As/Ca0.52In0.48P double heterojunction pseudomorphic high electron mobility transistor, SOL ST ELEC, 44(6), 2000, pp. 1035-1042

Authors: Yoon, SF Kam, AHT Zheng, HQ Gay, BP

Citation: Sf. Yoon et al., A simulation study on the effect of channel thickness on the characteristics of Ga0.52In0.48P/In0.2Ga0.8As/Ga0.52In0.48P DH-pHEMT, MICROELEC J, 31(8), 2000, pp. 667-676

Authors: Yoon, SF Kam, AHT Gay, BP Zheng, HQ Ng, GI

Citation: Sf. Yoon et al., Study of In0.48Ga0.52P/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor using a two-dimensional device simulator, MICROELEC J, 30(8), 1999, pp. 745-752