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Results: 51-65/65
Authors:
Fischer, P
Christen, J
Zacharias, M
Schwegler, V
Kirchner, C
Kamp, M
Citation: P. Fischer et al., Scanning electroluminescence microscopy: A powerful novel characterizationtool for light emitting diodes, PHYS ST S-A, 176(1), 1999, pp. 119-123
Authors:
Daumiller, I
Schmid, P
Kohn, E
Kirchner, C
Kamp, M
Ebeling, KJ
Pond, LL
Weitzel, C
Citation: I. Daumiller et al., DC and RF characteristics of AlN/GaN doped channel heterostructure field effect transister, PHYS ST S-A, 176(1), 1999, pp. 179-181
Authors:
Schwegler, V
Schad, SS
Kirchner, C
Seyboth, M
Kamp, M
Ebeling, KJ
Kudryashov, VE
Turkin, AN
Yunovich, AE
Stempfle, U
Link, A
Limmer, W
Sauer, R
Citation: V. Schwegler et al., Ohmic heating of InGaN LEDs during operation: Determination of the junction temperature and its influence on device performance, PHYS ST S-A, 176(1), 1999, pp. 783-786
Authors:
Mayer, M
Pelzmann, A
Chung, HY
Kamp, M
Ebeling, KJ
Citation: M. Mayer et al., Reactive MBE of group III nitrides: high-quality homoepitaxial GaN and ultra-violet light-emitting diodes, J CRYST GR, 202, 1999, pp. 318-322
Authors:
Prystawko, P
Leszczynski, M
Sliwinski, A
Teisseyre, H
Suski, T
Bockowski, M
Porowski, S
Domagala, J
Kirchner, C
Pelzmann, A
Schauler, M
Kamp, M
Citation: P. Prystawko et al., Epitaxy of ternary nitrides on GaN single crystals, J CRYST GR, 199, 1999, pp. 1061-1065
Authors:
Link, A
Bitzer, K
Limmer, W
Sauer, R
Kirchner, C
Schwegler, V
Kamp, M
Ebling, DG
Benz, KW
Citation: A. Link et al., Temperature dependence of the E-2 and A(1)(LO) phonons in GaN and AlN, J APPL PHYS, 86(11), 1999, pp. 6256-6260
Authors:
Kamp, M
Schmitt, M
Hofmann, J
Schafer, F
Reithmaier, JP
Forchel, A
Citation: M. Kamp et al., InGaAs/AlGaAs quantum dot DFB lasers operating up to 213 degrees C, ELECTR LETT, 35(23), 1999, pp. 2036-2037
Authors:
Daumiller, I
Schmid, P
Kohn, E
Kirchner, C
Kamp, M
Ebeling, KJ
Pond, LL
Weitzel, C
Citation: I. Daumiller et al., DC and RF characteristics of AlN/GaN doped channel heterostructure field effect transistor, ELECTR LETT, 35(18), 1999, pp. 1588-1590
Authors:
Kirchner, C
Schwegler, V
Eberhard, F
Kamp, M
Ebeling, KJ
Kornitzer, K
Ebner, T
Thonke, K
Sauer, R
Prystawko, P
Leszczynski, M
Grzegory, I
Porowski, S
Citation: C. Kirchner et al., Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology, APPL PHYS L, 75(8), 1999, pp. 1098-1100
Authors:
Fischer, P
Christen, J
Zacharias, M
Schwegler, V
Kirchner, C
Kamp, M
Citation: P. Fischer et al., Direct imaging of the spectral emission characteristic of an InGaN/GaN-ultraviolet light-emitting diode by highly spectrally and spatially resolved electroluminescence and photoluminescence microscopy, APPL PHYS L, 75(22), 1999, pp. 3440-3442
Authors:
Brown, SA
Reeves, RJ
Haase, CS
Cheung, R
Kirchner, C
Kamp, M
Citation: Sa. Brown et al., Reactive-ion-etched gallium nitride: Metastable defects and yellow luminescence, APPL PHYS L, 75(21), 1999, pp. 3285-3287
Authors:
Schauler, M
Eberhard, F
Kirchner, C
Schwegler, V
Pelzmann, A
Kamp, M
Ebeling, KJ
Bertram, F
Riemann, T
Christen, J
Prystawko, P
Leszczynski, M
Grzegory, I
Porowski, S
Citation: M. Schauler et al., Dry etching of GaN substrates for high-quality homoepitaxy, APPL PHYS L, 74(8), 1999, pp. 1123-1125
Authors:
Kamp, M
Hofmann, J
Forchel, A
Schafer, F
Reithmaier, JP
Citation: M. Kamp et al., Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAsdistributed feedback lasers, APPL PHYS L, 74(4), 1999, pp. 483-485
Authors:
Cheung, R
Withanage, S
Reeves, RJ
Brown, SA
Ben-Yaacov, I
Kirchner, C
Kamp, M
Citation: R. Cheung et al., Reactive ion etch-induced effects on the near-band-edge luminescence in GaN, APPL PHYS L, 74(21), 1999, pp. 3185-3187
Authors:
Boekhout, T
Kamp, M
Gueho, E
Citation: T. Boekhout et al., Molecular typing of Malassezia species with PFGE and RAPD, MED MYCOL, 36(6), 1998, pp. 365-372