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Results: 1-8 |
Results: 8
Evaluation of reactive ion etching processes for fabrication of integratedGaAs/AlGaAs optoelectronic devices
Authors: Aperathitis, E Cengher, D Kayambaki, M Androulidaki, M Deligeorgis, G Tsagaraki, K Hatzopoulous, Z Georgakilas, A
Citation: E. Aperathitis et al., Evaluation of reactive ion etching processes for fabrication of integratedGaAs/AlGaAs optoelectronic devices, MAT SCI E B, 80(1-3), 2001, pp. 77-80
Selective etching during the electrochemical C-V profiling of PM-HEMTs
Authors: Kayambaki, M Tsagaraki, K Lagadas, M Panayotatos, P
Citation: M. Kayambaki et al., Selective etching during the electrochemical C-V profiling of PM-HEMTs, MAT SCI E B, 80(1-3), 2001, pp. 164-167
Evaluation of performance capabilities of emitters and detectors based on a common MQW structure
Authors: Cengher, D Aperathitis, E Androulidaki, M Deligeorgis, G Kayambaki, M Hatzopoulos, Z Tzanetakis, P Georgakilas, A
Citation: D. Cengher et al., Evaluation of performance capabilities of emitters and detectors based on a common MQW structure, MAT SCI E B, 80(1-3), 2001, pp. 241-244
Direct MBE growth of GaN on GaAs substrates for integrated short wavelength emitters
Authors: Georgakilas, A Tsagaraki, K Makarona, E Constantinidis, G Adroulidaki, M Kayambaki, M Aperathitis, E Pelekanos, NT
Citation: A. Georgakilas et al., Direct MBE growth of GaN on GaAs substrates for integrated short wavelength emitters, MAT SC S PR, 3(5-6), 2000, pp. 511-515
Crystal quality evaluation by electrochemical preferential etching of p-type SiC crystals
Authors: Kayambaki, M Tsagaraki, K Cimalla, V Zekentes, K Yakimova, R
Citation: M. Kayambaki et al., Crystal quality evaluation by electrochemical preferential etching of p-type SiC crystals, J ELCHEM SO, 147(7), 2000, pp. 2744-2748
Comparative investigation of MBE and MOCVD PMHEMT structures for high frequency applications
Authors: Lagadas, M Michelakis, K Kayambaki, M Panayotatos, P
Citation: M. Lagadas et al., Comparative investigation of MBE and MOCVD PMHEMT structures for high frequency applications, MAT SCI E B, 66(1-3), 1999, pp. 92-96
Improvements in Pt-based Schottky contacts to 3C-SiC
Authors: Constantinidis, G Pecz, B Tsagaraki, K Kayambaki, M Michelakis, K
Citation: G. Constantinidis et al., Improvements in Pt-based Schottky contacts to 3C-SiC, MAT SCI E B, 61-2, 1999, pp. 406-410
Material properties of InAlAs layers grown by MBE on vicinal (111)B InP substrates
Authors: Georgakilas, A Michelakis, K Kayambaki, M Tsagaraki, K Macarona, E Hatzopoulos, Z Vila, A Becourt, N Peiro, F Cornet, A Chrysanthakopoulos, N Calamiotou, M
Citation: A. Georgakilas et al., Material properties of InAlAs layers grown by MBE on vicinal (111)B InP substrates, J CRYST GR, 202, 1999, pp. 248-251
Risultati: 1-8 |