Authors:
Vaitkus, J
Baubinas, R
Gaubas, E
Jarasiunas, K
Jasinskaite, R
Kazukauskas, V
Kuprusevicius, E
Matukas, J
Palenskis, V
Storasta, J
Sudzius, M
Tomasiunas, R
Citation: J. Vaitkus et al., GaAs peculiarities related with inhomogeneities and the methods for revealof their properties, NUCL INST A, 466(1), 2001, pp. 39-46
Citation: V. Kazukauskas et al., Effect of indium doping on transient transport phenomena in semi-insulating GaAs, PHYS REV B, 62(16), 2000, pp. 10882-10890
Authors:
Kavaliauskiene, G
Kazukauskas, V
Rinkevicius, V
Storasta, J
Vaitkus, JV
Bates, R
O'Shea, V
Smith, KM
Citation: G. Kavaliauskiene et al., Thermally stimulated currents in semi-insulating GaAs Schottky diodes and their simulation, APPL PHYS A, 69(4), 1999, pp. 415-420
Authors:
Kazukauskas, V
Grun, M
Petillon, S
Storzum, A
Klingshirn, C
Citation: V. Kazukauskas et al., Experimental observation of two-dimensional electron gas in the CdS quantum wells of CdS/ZnSe heterostructures, APPL PHYS L, 74(3), 1999, pp. 395-397