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Results:
1-3
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Results: 3
Fabrication of self-aligned 90-nm fully depleted SOICMOS SLOTFETs
Authors:
Chen, CK Chen, CL Gouker, PM Wyatt, PW Yost, DR Burns, JA Suntharalingam, V Fritze, M Keast, CL
Citation:
Ck. Chen et al., Fabrication of self-aligned 90-nm fully depleted SOICMOS SLOTFETs, IEEE ELEC D, 22(7), 2001, pp. 345-347
High-frequency characterization of sub-0.25-mu m fully depleted silicon-on-insulator MOSFETs
Authors:
Chen, CL Mathews, RH Burns, JA Wyatt, PW Yost, DR Chen, CK Fritze, M Knecht, JM Suntharalingam, V Soares, A Keast, CL
Citation:
Cl. Chen et al., High-frequency characterization of sub-0.25-mu m fully depleted silicon-on-insulator MOSFETs, IEEE ELEC D, 21(10), 2000, pp. 497-499
New insights into fully-depleted SOI transistor response after total-dose irradiation
Authors:
Schwank, JR Shaneyfelt, MR Dodd, PE Burns, JA Keast, CL Wyatt, PW
Citation:
Jr. Schwank et al., New insights into fully-depleted SOI transistor response after total-dose irradiation, IEEE NUCL S, 47(3), 2000, pp. 604-612
Risultati:
1-3
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