Authors: Keys, P Gossmann, HJ Ng, KK Rafferty, CS

Citation: P. Keys et al., Series resistance limits for 0.05 mu m MOSFETs, SUPERLATT M, 27(2-3), 2000, pp. 125-136

Authors: Keys, P

Citation: P. Keys, Creativity, design and style in MS/OR, OMEGA-INT J, 28(3), 2000, pp. 303-312

Authors: Keys, P

Citation: P. Keys, Sockwear and its analysis: an examination of the Jones and Morse-Jones approaches, OMEGA-INT J, 28(2), 2000, pp. 229-232

Authors: Brindos, R Keys, P Jones, KS Law, ME

Citation: R. Brindos et al., Effect of arsenic doping on {311} defect dissolution in silicon, APPL PHYS L, 75(2), 1999, pp. 229-231