Authors:
Kirilyuk, V
Zauner, ARA
Christianen, PCM
Weyher, JL
Hageman, PR
Larsen, PK
Citation: V. Kirilyuk et al., Photoluminescence study of homoepitaxial N-polar GaN grown on differently misoriented single crystal substrates, J CRYST GR, 230(3-4), 2001, pp. 477-480
Authors:
Haffouz, S
Kirilyuk, V
Hageman, PR
Macht, L
Weyher, JL
Larsen, PK
Citation: S. Haffouz et al., Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment, APPL PHYS L, 79(15), 2001, pp. 2390-2392
Citation: V. Kirilyuk et Je. Falk, Minimizing the mean damage for parallel-series systems with two failure modes, COMPUT OP A, 17(2-3), 2000, pp. 301-328
Authors:
Zauner, ARA
Weyher, JL
Plomp, M
Kirilyuk, V
Grzegory, I
van Enckevort, WJP
Schermer, JJ
Hageman, PR
Larsen, PK
Citation: Ara. Zauner et al., Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation, J CRYST GR, 210(4), 2000, pp. 435-443