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Results: 1-8 |
Results: 8

Authors: Kirilyuk, V Zauner, ARA Christianen, PCM Weyher, JL Hageman, PR Larsen, PK
Citation: V. Kirilyuk et al., Photoluminescence study of homoepitaxial N-polar GaN grown on differently misoriented single crystal substrates, J CRYST GR, 230(3-4), 2001, pp. 477-480

Authors: Haffouz, S Kirilyuk, V Hageman, PR Macht, L Weyher, JL Larsen, PK
Citation: S. Haffouz et al., Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment, APPL PHYS L, 79(15), 2001, pp. 2390-2392

Authors: Zauner, ARA Schermer, JJ van Enckevort, WJP Kirilyuk, V Weyher, J Grzegory, I Hageman, PR Larsen, PK
Citation: Ara. Zauner et al., Homo-epitaxial growth on misoriented GaN substrates by MOCVD, MRS I J N S, 5, 2000, pp. NIL_365-NIL_370

Authors: Kirilyuk, V Falk, JE
Citation: V. Kirilyuk et Je. Falk, Minimizing the mean damage for parallel-series systems with two failure modes, COMPUT OP A, 17(2-3), 2000, pp. 301-328

Authors: Zauner, ARA Weyher, JL Plomp, M Kirilyuk, V Grzegory, I van Enckevort, WJP Schermer, JJ Hageman, PR Larsen, PK
Citation: Ara. Zauner et al., Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation, J CRYST GR, 210(4), 2000, pp. 435-443

Authors: Kirilyuk, V Zauner, ARA Christianen, PCM Weyher, JL Hageman, PR Larsen, PK
Citation: V. Kirilyuk et al., Exciton-related photoluminescence in homoepitaxial GaN of Ga and N polarities, APPL PHYS L, 76(17), 2000, pp. 2355-2357

Authors: Hageman, PR Devillers, MAC Zauner, ARA Kirilyuk, V Bouwens, WS Crane, RCM Larsen, PK
Citation: Pr. Hageman et al., A study on the silane doping of hetero-epitaxial MOCVD grown GaN, PHYS ST S-B, 216(1), 1999, pp. 609-613

Authors: Kirilyuk, A Kirilyuk, V Rasing, T
Citation: A. Kirilyuk et al., Nonlinear magneto-optical imaging of interface magnetic structures, J MAGN MAGN, 199, 1999, pp. 620-623
Risultati: 1-8 |