Authors: Yamaguchi, A Takahashi, M Kishimura, S Matsuzawa, N Ohfuji, T Tanaka, T Tagawa, S Sasago, M

Citation: A. Yamaguchi et al., Dissolution rate analysis of ArF resists based on the percolation model, JPN J A P 1, 38(7A), 1999, pp. 4033-4040

Authors: Kishimura, S Kimura, Y Sakai, J Tsujita, K Matsui, Y

Citation: S. Kishimura et al., Improvement of dry etching resistance of resists by deep UV cure, JPN J A P 1, 38(1A), 1999, pp. 250-255

Authors: Kishimura, S Katsuyama, A Sasago, M Shirai, M Tsunooka, M

Citation: S. Kishimura et al., Design concepts of single-layer resists for vacuum ultraviolet lithography, JPN J A P 1, 38(12B), 1999, pp. 7103-7108

Authors: Takahashi, M Kishimura, S Ohfuji, T Sasago, M

Citation: M. Takahashi et al., Challenges to 0.1 mu m resolution capability in ArF single layer resist process with weak resolution enhancement techniques, JPN J A P 1, 37(12B), 1998, pp. 6723-6728

Authors: Kishimura, S Takahashi, M Ohfuji, T Sasago, M

Citation: S. Kishimura et al., Study of the bottom antireflective coating process using a high-transparency resist for ArF excimer laser lithography, JPN J A P 1, 37(12B), 1998, pp. 6729-6733