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Results: 1-17 |
Results: 17
Microcrystalline silicon films deposited by hot-wire CVD for solar cells on low-temperature substrate
Authors: Niikura, C Brenot, R Guillet, J Bouree, JE Kleider, JP Bruggemann, R Longeaud, C
Citation: C. Niikura et al., Microcrystalline silicon films deposited by hot-wire CVD for solar cells on low-temperature substrate, SOL EN MAT, 66(1-4), 2001, pp. 421-429
Electronic properties of CVD polycrystalline diamond films
Authors: Alvarez, J Kleider, JP Bergonzo, P Brambilla, A Tromson, D Mer, C Guizard, B Foulon, F
Citation: J. Alvarez et al., Electronic properties of CVD polycrystalline diamond films, DIAM RELAT, 10(3-7), 2001, pp. 588-592
Diamond UV detectors for future solar physics missions
Authors: Hochedez, JF Bergonzo, P Castex, MC Dhez, P Hainaut, O Sacchi, M Alvarez, J Boyer, H Deneuville, A Gibart, P Guizard, B Kleider, JP Lemaire, P Mer, C Monroy, E Munoz, E Muret, P Omnes, F Pau, JL Ralchenko, V Tromson, D Verwichte, E Vial, JC
Citation: Jf. Hochedez et al., Diamond UV detectors for future solar physics missions, DIAM RELAT, 10(3-7), 2001, pp. 673-680
Electronic properties of hydrogenated amorphous carbon films deposited using ECR-RF plasma method
Authors: Racine, B Benlahsen, M Zellama, K Bouzerar, R Kleider, JP Von Bardeleben, HJ
Citation: B. Racine et al., Electronic properties of hydrogenated amorphous carbon films deposited using ECR-RF plasma method, DIAM RELAT, 10(2), 2001, pp. 200-206
Electronic properties of Erbium doped amorphous silicon
Authors: Kleider, JP Longeaud, C Meaudre, R Meaudre, M Vignoli, S Koughia, KV Terukov, EI
Citation: Jp. Kleider et al., Electronic properties of Erbium doped amorphous silicon, MAT SCI E B, 81(1-3), 2001, pp. 71-73
Electronic and topographic properties of amorphous and microcrystalline silicon thin films
Authors: Kleider, JP Longeaud, C Bruggemann, R Houze, F
Citation: Jp. Kleider et al., Electronic and topographic properties of amorphous and microcrystalline silicon thin films, THIN SOL FI, 383(1-2), 2001, pp. 57-60
Microcrystalline silicon deposited by the hot-wire CVD technique
Authors: Guillet, J Niikura, C Bouree, JE Kleider, JP Longeaud, C Bruggemann, R
Citation: J. Guillet et al., Microcrystalline silicon deposited by the hot-wire CVD technique, MAT SCI E B, 69, 2000, pp. 284-288
Density of states in the channel material of low temperature polycrystalline silicon thin film transistors
Authors: Mourgues, K Rahal, A Mohammed-Brahim, T Sarret, M Kleider, JP Longeaud, C Bachrouri, A Romano-Rodriguez, A
Citation: K. Mourgues et al., Density of states in the channel material of low temperature polycrystalline silicon thin film transistors, J NON-CRYST, 266, 2000, pp. 1279-1283
High quality unhydrogenated low-pressure chemical vapor deposited polycrystalline silicon
Authors: Rogel, R Sarret, M Mohammed-Brahim, T Bonnaud, O Kleider, JP
Citation: R. Rogel et al., High quality unhydrogenated low-pressure chemical vapor deposited polycrystalline silicon, J NON-CRYST, 266, 2000, pp. 141-145
Electronic properties of silicon thin films prepared by hot-wire chemical vapour deposition
Authors: Bruggemann, R Kleider, JP Longeaud, C Mencaraglia, D Guillet, J Bouree, JE Niikura, C
Citation: R. Bruggemann et al., Electronic properties of silicon thin films prepared by hot-wire chemical vapour deposition, J NON-CRYST, 266, 2000, pp. 258-262
Anisotropy in the transport of microcrystalline silicon
Authors: Unold, T Bruggemann, R Kleider, JP Longeaud, C
Citation: T. Unold et al., Anisotropy in the transport of microcrystalline silicon, J NON-CRYST, 266, 2000, pp. 325-330
Erbium incorporation in plasma-deposited amorphous silicon
Authors: Terukov, EI Konkov, OI Kudoyarova, VK Koughia, KV Weiser, G Kuhne, H Kleider, JP Longeaud, C Bruggemann, R
Citation: Ei. Terukov et al., Erbium incorporation in plasma-deposited amorphous silicon, J NON-CRYST, 266, 2000, pp. 614-618
Some electronic and metastability properties of a new nanostructured material: hydrogenated polymorphous silicon
Authors: Butte, R Meaudre, R Meaudre, M Vignoli, S Longeaud, C Kleider, JP Cabarrocas, PRI
Citation: R. Butte et al., Some electronic and metastability properties of a new nanostructured material: hydrogenated polymorphous silicon, PHIL MAG B, 79(7), 1999, pp. 1079-1095
Investigation of defect levels in semi-insulating materials by modulated and transient photocurrent: comparison of methods
Authors: Longeaud, C Kleider, JP Kaminski, P Kozlowski, R Pawlowski, M Cwirko, J
Citation: C. Longeaud et al., Investigation of defect levels in semi-insulating materials by modulated and transient photocurrent: comparison of methods, SEMIC SCI T, 14(9), 1999, pp. 747-756
Electronic properties of bottom gate silicon nitride/hydrogenated amorphous silicon structures
Authors: Kleider, JP Longeaud, C Dayoub, F
Citation: Jp. Kleider et al., Electronic properties of bottom gate silicon nitride/hydrogenated amorphous silicon structures, THIN SOL FI, 337(1-2), 1999, pp. 208-212
Midgap density of states in hydrogenated polymorphous silicon
Authors: Meaudre, M Meaudre, R Butte, R Vignoli, S Longeaud, C Kleider, JP Cabarrocas, PRI
Citation: M. Meaudre et al., Midgap density of states in hydrogenated polymorphous silicon, J APPL PHYS, 86(2), 1999, pp. 946-950
Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements
Authors: Kleider, JP Longeaud, C Gauthier, M Meaudre, M Meaudre, R Butte, R Vignoli, S Cabarrocas, PRI
Citation: Jp. Kleider et al., Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements, APPL PHYS L, 75(21), 1999, pp. 3351-3353
Risultati: 1-17 |