Authors:
Timp, G
Bude, J
Baumann, F
Bourdelle, KK
Boone, T
Garno, J
Ghetti, A
Green, M
Gossmann, H
Kim, Y
Kleiman, R
Kornblit, A
Klemens, F
Moccio, S
Muller, D
Rosamilia, J
Silverman, P
Sorsch, T
Timp, W
Tennant, D
Tung, R
Weir, B
Citation: G. Timp et al., The relentless march of the MOSFET gate oxide thickness to zero, MICROEL REL, 40(4-5), 2000, pp. 557-562