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Results: 1-25 | 26-35 |
Results: 26-35/35
High-depth-resolution Rutherford backscattering data and error analysis ofSiGe systems using the simulated annealing and Markov chain Monte Carlo algorithms
Authors: Barradas, NP Knights, AP Jeynes, C Mironov, OA Grasby, TJ Parker, EHC
Citation: Np. Barradas et al., High-depth-resolution Rutherford backscattering data and error analysis ofSiGe systems using the simulated annealing and Markov chain Monte Carlo algorithms, PHYS REV B, 59(7), 1999, pp. 5097-5105
Diagnostic measurement of ion implantation dose and uniformity with a laboratory-based positron probe
Authors: Coleman, PG Knights, AP Gwilliam, RM
Citation: Pg. Coleman et al., Diagnostic measurement of ion implantation dose and uniformity with a laboratory-based positron probe, J APPL PHYS, 86(11), 1999, pp. 5988-5992
Assessment of the normalization procedure used for interlaboratory comparisons of positron beam measurements
Authors: Goldberg, RD Knights, AP Simpson, PJ Coleman, PG
Citation: Rd. Goldberg et al., Assessment of the normalization procedure used for interlaboratory comparisons of positron beam measurements, J APPL PHYS, 86(1), 1999, pp. 342-345
Enhanced depth resolution in positron analysis of ion irradiated SiO2 films
Authors: Simpson, PJ Spooner, M Xia, H Knights, AP
Citation: Pj. Simpson et al., Enhanced depth resolution in positron analysis of ion irradiated SiO2 films, J APPL PHYS, 85(3), 1999, pp. 1765-1770
Direct extraction and numerical simulation of the base and collector delaytimes in double heterojunction bipolar transistors
Authors: Sotoodeh, M Khalid, AH Sheng, H Amin, FA Gokdemir, T Rezazadeh, AA Knights, AP Button, CC
Citation: M. Sotoodeh et al., Direct extraction and numerical simulation of the base and collector delaytimes in double heterojunction bipolar transistors, IEEE DEVICE, 46(6), 1999, pp. 1081-1086
Laterally stacked varactor formed by ion implantation
Authors: Knights, AP Kelly, MJ
Citation: Ap. Knights et Mj. Kelly, Laterally stacked varactor formed by ion implantation, ELECTR LETT, 35(10), 1999, pp. 846-847
The equivalence of vacancy-type damage in ion-implanted Si seen by positron annihilation spectroscopy
Authors: Knights, AP Malik, F Coleman, PG
Citation: Ap. Knights et al., The equivalence of vacancy-type damage in ion-implanted Si seen by positron annihilation spectroscopy, APPL PHYS L, 75(4), 1999, pp. 466-468
High temperature proton implantation induced photosensitivity of Ge-doped SiO2 planar waveguides
Authors: Hughes, PJ Knights, AP Weiss, BL Kuna, S Coleman, PG Ojha, S
Citation: Pj. Hughes et al., High temperature proton implantation induced photosensitivity of Ge-doped SiO2 planar waveguides, APPL PHYS L, 74(22), 1999, pp. 3311-3313
Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal-oxide-semiconductor field effect transistor channels
Authors: Grasby, TJ Parry, CP Phillips, PJ McGregor, BM Morris, RJH Braithwaite, G Whall, TE Parker, EHC Hammond, R Knights, AP Coleman, PG
Citation: Tj. Grasby et al., Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal-oxide-semiconductor field effect transistor channels, APPL PHYS L, 74(13), 1999, pp. 1848-1850
Positron spectroscopy of vacancy-type defects in Si created by 5 keV B+ implantation
Authors: Malik, F Coleman, PG Knights, AP Gwilliam, R Nejim, A Ho, OY
Citation: F. Malik et al., Positron spectroscopy of vacancy-type defects in Si created by 5 keV B+ implantation, J PHYS-COND, 10(46), 1998, pp. 10403-10408
Risultati: 1-25 | 26-35 |