Citation: K. Asami et al., Quantitative XPS determination of Pt coverage on SrBi2Ta2O9 thin films forferroelectric memories, SURF INT AN, 31(4), 2001, pp. 265-270
Authors:
Osaka, T
Yoshie, T
Hoshika, T
Koiwa, I
Sawada, Y
Hashimoto, A
Citation: T. Osaka et al., Control of crystal orientation of ferroelectric SrBi2Ta2O9 thin films withmulti-seeding layers, JPN J A P 1, 39(9B), 2000, pp. 5476-5480
Citation: K. Asami et al., Metallic bismuth on strontium-bismuth tantalate thin films for ferroelectric memory application, SURF INT AN, 30(1), 2000, pp. 391-395
Citation: I. Koiwa et al., Tantalum-chromium alloy films as contact materials for a capacitor using Sr0.9Bi2.1Ta2O9 for ferroelectric memories, J ELCHEM SO, 147(4), 2000, pp. 1487-1492
Citation: K. Asami et al., Effects of ion etching and annealing in O-2 atmosphere following ion etching on properties and chemistry of Sr0.9Bi2.1Ta2O9+a thin films, JPN J A P 1, 38(9B), 1999, pp. 5423-5427
Authors:
Sawada, Y
Kobari, H
Sato, Y
Hashimoto, A
Koiwa, I
Kobayashi, H
Osaka, T
Citation: Y. Sawada et al., A study on low-temperature crystallization of SrBi2Ta2O9 thin films prepared by sol-gel method using steam curing process, INTEGR FERR, 26(1-4), 1999, pp. 889-897
Authors:
Tofuku, A
Yoshie, T
Osaka, T
Koiwa, I
Kobayashi, H
Sawada, Y
Hashimoto, A
Citation: A. Tofuku et al., Analysis of the degradation mechanism of Pt/SrBi2(Ta/Nb)(2)O-9/Pt capacitors during reductive annealing, INTEGR FERR, 25(1-4), 1999, pp. 585-604
Citation: H. Yamane et al., Highly sensitive giant magnetoresistive sensor consisting of NiO spin-valve element and AC bias current line, J MAGN MAGN, 199, 1999, pp. 128-130
Authors:
Ono, S
Sakakibara, A
Osaka, T
Koiwa, I
Mita, J
Asami, K
Citation: S. Ono et al., Characterization of ferroelectric SrBi2Ta2O9 thin films prepared from alkoxide solutions, J ELCHEM SO, 146(2), 1999, pp. 685-690