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Results: 1-2 |
Results: 2
Analysis on defect generation during the SiC bulk growth process
Authors: Hofmann, D Schmitt, E Bickermann, M Kolbl, M Wellmann, PJ Winnacker, A
Citation: D. Hofmann et al., Analysis on defect generation during the SiC bulk growth process, MAT SCI E B, 61-2, 1999, pp. 48-53
Sublimation growth of silicon carbide bulk crystals: experimental and theoretical studies on defect formation and growth rate augmentation
Authors: Hofmann, D Bickermann, M Eckstein, R Kolbl, M Muller, SG Schmitt, E Weber, A Winnacker, A
Citation: D. Hofmann et al., Sublimation growth of silicon carbide bulk crystals: experimental and theoretical studies on defect formation and growth rate augmentation, J CRYST GR, 199, 1999, pp. 1005-1010
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