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Results:
1-7
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Results: 7
Authors:
Kompan, ME
Kulik, VB
Novak, II
Salonen, J
Subashiev, AV
Citation: Me. Kompan et al., Raman light scattering in system of oriented wires in porous silicon, J POROUS MA, 7(1-3), 2000, pp. 275-278
Authors:
Kompan, ME
Shabanov, IY
Zhilyaev, YV
Citation: Me. Kompan et al., Polarization-dependent inhomogeneous broadening of the edge luminescence band of hexagonal gallium nitride, PHYS SOL ST, 42(6), 2000, pp. 1041-1044
Authors:
Bessolov, VN
Zhilyaev, YV
Zavarin, EE
Kompan, ME
Konenkova, EV
Usikov, AS
Fedirko, VA
Citation: Vn. Bessolov et al., Nanorelief of a GaN surface: The effect of sulfide treatment, SEMICONDUCT, 34(11), 2000, pp. 1301-1304
Authors:
Kompan, ME
Salonen, J
Shabanov, IY
Citation: Me. Kompan et al., Anomalous birefringence of light in free-standing samples of porous silicon, J EXP TH PH, 90(2), 2000, pp. 324-329
Authors:
Kompan, ME
Novak, II
Kulik, VB
Kamakova, NA
Citation: Me. Kompan et al., Enhancement of Raman scattering intensity in porous silicon, PHYS SOL ST, 41(7), 1999, pp. 1207-1209
Authors:
Kompan, ME
Shabanov, IY
Salonen, Y
Citation: Me. Kompan et al., Orientation-dependent Faraday effect in thin films of porous silicon, PHYS SOL ST, 41(1), 1999, pp. 45-47
Authors:
Zhilyaev, YV
Kompan, ME
Konenkova, EV
Mokeev, AS
Raevskii, SD
Citation: Yv. Zhilyaev et al., Photoluminescence of n-GaN: influence of chemical treatment of the surfaceusing sulfide solutions, TECH PHYS L, 24(12), 1998, pp. 986-987
Risultati:
1-7
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