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Results: 1-7 |
Results: 7
Temperature dependence of the quantum efficiency of 4H-SiC-Based Schottky photodiodes
Authors: Blank, TV Gol'dberg, YA Kalinina, EV Konstantinov, OV Konstantinov, AO Hallen, A
Citation: Tv. Blank et al., Temperature dependence of the quantum efficiency of 4H-SiC-Based Schottky photodiodes, TECH PHYS L, 27(9), 2001, pp. 776-778
A phenomenological parameter characterizing the relaxation of stresses caused by the lattice mismatch at a heteroboundary
Authors: Konstantinov, OV Kotel'nikov, EY Matveentsev, AV Romanov, AE
Citation: Ov. Konstantinov et al., A phenomenological parameter characterizing the relaxation of stresses caused by the lattice mismatch at a heteroboundary, TECH PHYS L, 27(8), 2001, pp. 683-685
An active lasing region with a quantum well and a quantum dot array
Authors: Evtikhiev, VP Konstantinov, OV Matveentsev, AV
Citation: Vp. Evtikhiev et al., An active lasing region with a quantum well and a quantum dot array, TECH PHYS L, 27(3), 2001, pp. 248-250
Mechanism of the current flow in Pd-(heavily doped p-AlxGa1-xN) ohmic contact
Authors: Blank, TV Goldberg, YA Kalinina, EV Konstantinov, OV Nikolaev, AE Fomin, AV Cherenkov, AE
Citation: Tv. Blank et al., Mechanism of the current flow in Pd-(heavily doped p-AlxGa1-xN) ohmic contact, SEMICONDUCT, 35(5), 2001, pp. 529-532
Absorption spectra of GaN: film characterization by Urbach spectral tail and the effect of electric field
Authors: Jacobson, MA Konstantinov, OV Nelson, DK Romanovskii, SO Hatzopoulos, Z
Citation: Ma. Jacobson et al., Absorption spectra of GaN: film characterization by Urbach spectral tail and the effect of electric field, J CRYST GR, 230(3-4), 2001, pp. 459-461
A comparison of the temperature dependences of photoeffect quantum efficiencies in GaAs p-n structures and Schottky diodes
Authors: Goldberg, YA Konstantinov, OV Lantratov, VM Obolensky, OI Petelina, TV Posse, EA Shvarts, MZ
Citation: Ya. Goldberg et al., A comparison of the temperature dependences of photoeffect quantum efficiencies in GaAs p-n structures and Schottky diodes, SEMICONDUCT, 33(7), 1999, pp. 804-806
Field and temperature dependencies of the quantum efficiency of GaAs and GaP Schottky diodes
Authors: Goldberg, YA Konstantinov, OV Obolensky, OI Petelina, TV Posse, EA
Citation: Ya. Goldberg et al., Field and temperature dependencies of the quantum efficiency of GaAs and GaP Schottky diodes, J PHYS-COND, 11(2), 1999, pp. 455-463
Risultati: 1-7 |