Authors: Kornitzer, K Ebner, T Grehl, M Thonke, K Sauer, R Kirchner, C Schwegler, V Kamp, M Leszczynski, M Grzegory, I Porowski, S

Citation: K. Kornitzer et al., High-resolution photoluminescence and reflectance spectra of homoepitaxialGaN layers, PHYS ST S-B, 216(1), 1999, pp. 5-9

Authors: Kornitzer, K Ebner, T Thonke, K Sauer, R Krichner, C Schwegler, V Kamp, M Leszczynski, M Grzegory, I Porowski, S

Citation: K. Kornitzer et al., Photoluminescence and reflectance spectroscopy of excitonic transitions inhigh-quality homoepitaxial GaN films, PHYS REV B, 60(3), 1999, pp. 1471-1473

Authors: Dietrich, R Vescan, A Wieszt, A Leier, H Boutros, KS Redwing, JM Kornitzer, K Freitag, R Ebner, T Thonke, K

Citation: R. Dietrich et al., Effect of illumination on the electrical characteristics of AlGaN/GaN FETs, PHYS ST S-A, 176(1), 1999, pp. 209-212

Authors: Kornitzer, K Limmer, W Thonke, K Sauer, R Ebling, DG Steinke, L Benz, KW

Citation: K. Kornitzer et al., AlN on sapphire and on SiC: CL and Raman study, J CRYST GR, 202, 1999, pp. 441-443

Authors: Kirchner, C Schwegler, V Eberhard, F Kamp, M Ebeling, KJ Kornitzer, K Ebner, T Thonke, K Sauer, R Prystawko, P Leszczynski, M Grzegory, I Porowski, S

Citation: C. Kirchner et al., Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology, APPL PHYS L, 75(8), 1999, pp. 1098-1100