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Results: 1-12 |
Results: 12
Metallisation induced electron traps in epitaxially grown n-type GaN
Authors: Auret, FD Goodman, SA Meyer, WE Koschnick, FK Spaeth, JM Beaumont, B Gibart, P
Citation: Fd. Auret et al., Metallisation induced electron traps in epitaxially grown n-type GaN, MAT SCI E B, 71, 2000, pp. 77-81
Radiation induced defects in MOVPE grown n-GaN
Authors: Goodman, SA Auret, FD Koschnick, FK Spaeth, JM Beaumont, B Gibart, P
Citation: Sa. Goodman et al., Radiation induced defects in MOVPE grown n-GaN, MAT SCI E B, 71, 2000, pp. 100-103
Optically detected magnetic resonance study of defects in undoped, Be-doped, and Mg-doped GaN
Authors: Koschnick, FK Michael, K Spaeth, JM Beaumont, B Gibart, P Calleja, E Munoz, E
Citation: Fk. Koschnick et al., Optically detected magnetic resonance study of defects in undoped, Be-doped, and Mg-doped GaN, J ELEC MAT, 29(12), 2000, pp. 1351-1355
Optically detected magnetic-resonance mapping on the yellow luminescence in GaN
Authors: Koschnick, FK Michael, K Spaeth, JM Beaumont, B Gibart, P
Citation: Fk. Koschnick et al., Optically detected magnetic-resonance mapping on the yellow luminescence in GaN, APPL PHYS L, 76(14), 2000, pp. 1828-1830
Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contacts
Authors: Auret, FD Goodman, SA Myburg, G Koschnick, FK Spaeth, JM Beaumont, B Gibart, P
Citation: Fd. Auret et al., Defect introduction in epitaxially grown n-GAN during electron beam deposition of Ru schottky contacts, PHYSICA B, 274, 1999, pp. 84-87
Metastable-like behaviour of a sputter deposition-induced electron trap inn-GaN
Authors: Auret, FD Meyer, WE Goodman, SA Koschnick, FK Spaeth, JM Beaumont, B Gibart, P
Citation: Fd. Auret et al., Metastable-like behaviour of a sputter deposition-induced electron trap inn-GaN, PHYSICA B, 274, 1999, pp. 92-95
Structural analysis of intrinsic defects in GaAs and A1(x)Gal(1-x)As by magnetooptically detected magnetic resonance spectroscopy
Authors: Koschnick, FK Spaeth, JM
Citation: Fk. Koschnick et Jm. Spaeth, Structural analysis of intrinsic defects in GaAs and A1(x)Gal(1-x)As by magnetooptically detected magnetic resonance spectroscopy, PHYS ST S-B, 216(2), 1999, pp. 817-907
Generation of EL2 defects by a 6-MeV proton irradiation of semi-insulatingGaAs
Authors: Goodman, SA Koschnick, FK Weber, C Spaeth, JM Auret, FD
Citation: Sa. Goodman et al., Generation of EL2 defects by a 6-MeV proton irradiation of semi-insulatingGaAs, SOL ST COMM, 110(11), 1999, pp. 593-598
Field-enhanced emission rate and electronic properties of a defect introduced in n-GaN by 5.4 MeV He-ion irradiation
Authors: Goodman, SA Auret, FD Koschnick, FK Spaeth, JM Beaumont, B Gibart, P
Citation: Sa. Goodman et al., Field-enhanced emission rate and electronic properties of a defect introduced in n-GaN by 5.4 MeV He-ion irradiation, APPL PHYS L, 74(6), 1999, pp. 809-811
Proton bombardment-induced electron traps in epitaxially grown n-GaN
Authors: Auret, FD Goodman, SA Koschnick, FK Spaeth, JM Beaumont, B Gibart, P
Citation: Fd. Auret et al., Proton bombardment-induced electron traps in epitaxially grown n-GaN, APPL PHYS L, 74(3), 1999, pp. 407-409
Sputter deposition-induced electron traps in epitaxially grown n-GaN
Authors: Auret, FD Goodman, SA Koschnick, FK Spaeth, JM Beaumont, B Gibart, P
Citation: Fd. Auret et al., Sputter deposition-induced electron traps in epitaxially grown n-GaN, APPL PHYS L, 74(15), 1999, pp. 2173-2175
Electrical characterization of two deep electron traps introduced in epitaxially grown n-GaN during He-ion irradiation
Authors: Auret, FD Goodman, SA Koschnick, FK Spaeth, JM Beaumont, B Gibart, P
Citation: Fd. Auret et al., Electrical characterization of two deep electron traps introduced in epitaxially grown n-GaN during He-ion irradiation, APPL PHYS L, 73(25), 1998, pp. 3745-3747
Risultati: 1-12 |