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Authors: Hu, X Koudymov, A Simin, G Yang, J Khan, MA Tarakji, A Shur, MS Gaska, R

Citation: X. Hu et al., Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effecttransistors, APPL PHYS L, 79(17), 2001, pp. 2832-2834

Authors: Simin, G Koudymov, A Tarakji, A Hu, X Yang, J Khan, MA Shur, MS Gaska, R

Citation: G. Simin et al., Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors, APPL PHYS L, 79(16), 2001, pp. 2651-2653

Authors: Tarakji, A Simin, G Ilinskaya, N Hu, X Kumar, A Koudymov, A Yang, J Khan, MA Shur, MS Gaska, R

Citation: A. Tarakji et al., Mechanism of radio-frequency current collapse in GaN-AlGaN field-effect transistors, APPL PHYS L, 78(15), 2001, pp. 2169-2171

Authors: Simin, G Hu, X Ilinskaya, N Kumar, A Koudymov, A Zhang, J Khan, MA Gaska, R Shur, MS

Citation: G. Simin et al., 7.5kW/mm(2) current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates, ELECTR LETT, 36(24), 2000, pp. 2043-2044