Authors: Lalinsky, T Skriniarova, J Kuzmik, J Hasenohrl, S Fox, A Tomaska, M Mozolova, Z Kovacik, T Krajcer, A Kordos, P

Citation: T. Lalinsky et al., Technology and performance of 150 nm gate length InGaP/InGaAs/GaAs pHEMTs, VACUUM, 61(2-4), 2001, pp. 323-327