AAAAAA

   
Results: 1-3 |
Results: 3

Authors: Kwo, J Hong, M Kortan, AR Queeney, KL Chabal, YJ Opila, RL Muller, DA Chu, SNG Sapjeta, BJ Lay, TS Mannaerts, JP Boone, T Krautter, HW Krajewski, JJ Sergnt, AM Rosamilia, JM
Citation: J. Kwo et al., Properties of high kappa gate dielectrics Gd2O3 and Y2O3 for Si, J APPL PHYS, 89(7), 2001, pp. 3920-3927

Authors: Chang, JP Krautter, HW Zhu, W Opila, RL Pai, CS
Citation: Jp. Chang et al., Integration of fluorinated amorphous carbon as low-dielectric constant insulator: Effects of heating and deposition of tantalum nitride, J VAC SCI A, 17(5), 1999, pp. 2969-2974

Authors: Levine, BF Pinzone, CJ Hui, S King, CA Leibenguth, RE Zolnowski, DR Lang, DV Krautter, HW Geva, M
Citation: Bf. Levine et al., Ultralow-dark-current wafer-bonded Si/InGaAs photodetectors, APPL PHYS L, 75(14), 1999, pp. 2141-2143
Risultati: 1-3 |