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Results: 1-8 |
Results: 8
Isotope effects in elemental semiconductors: a Raman study of silicon
Authors: Widulle, F Ruf, T Konuma, M Silier, I Cardona, M Kriegseis, W Ozhogin, VI
Citation: F. Widulle et al., Isotope effects in elemental semiconductors: a Raman study of silicon, SOL ST COMM, 118(1), 2001, pp. 1-22
Dislocation reduction in GaN grown by hydride vapor phase epitaxy via growth interruption modulation
Authors: Zhang, W Roesel, S Alves, HR Meister, D Kriegseis, W Hofmann, DM Meyer, BK Riemann, T Veit, P Blaesing, J Krost, A Christen, J
Citation: W. Zhang et al., Dislocation reduction in GaN grown by hydride vapor phase epitaxy via growth interruption modulation, APPL PHYS L, 78(6), 2001, pp. 772-774
Optical and electrical properties of MBE grown cubic GaN/GaAs epilayers doped by Si
Authors: As, DJ Richter, A Busch, J Schottker, B Lubbers, M Mimkes, J Schikora, D Lischka, K Kriegseis, W Burkhardt, W Meyer, BK
Citation: Dj. As et al., Optical and electrical properties of MBE grown cubic GaN/GaAs epilayers doped by Si, MRS I J N S, 5, 2000, pp. NIL_264-NIL_269
Dependence of the electrical and optical behaviour of ITO-silver-ITO multilayers on the silver properties
Authors: Kloppel, A Kriegseis, W Meyer, BK Scharmann, A Daube, C Stollenwerk, J Trube, J
Citation: A. Kloppel et al., Dependence of the electrical and optical behaviour of ITO-silver-ITO multilayers on the silver properties, THIN SOL FI, 365(1), 2000, pp. 139-146
Annealing studies on CuIn(Ga)Se-2: the influence of gallium
Authors: Dirnstorfer, I Burkhardt, W Kriegseis, W Osterreicher, I Alves, H Hofmann, DM Ka, O Polity, A Meyer, BK Braunger, D
Citation: I. Dirnstorfer et al., Annealing studies on CuIn(Ga)Se-2: the influence of gallium, THIN SOL FI, 361, 2000, pp. 400-405
A comparison of the Hall-effect and secondary ion mass spectroscopy on theshallow oxygen donor in unintentionally doped GaN films
Authors: Meister, D Bohm, M Topf, M Kriegseis, W Burkhardt, W Dirnstorfer, I Rosel, S Farangis, B Meyer, BK Hoffmann, A Siegle, H Thomsen, C Christen, J Bertram, F
Citation: D. Meister et al., A comparison of the Hall-effect and secondary ion mass spectroscopy on theshallow oxygen donor in unintentionally doped GaN films, J APPL PHYS, 88(4), 2000, pp. 1811-1817
High pressure fabrication and processing of GaN : Mg
Authors: Suski, T Jun, J Leszczynski, M Teisseyre, H Grzegory, I Porowski, S Dollinger, G Saarinen, K Laine, T Nissila, J Burkhard, W Kriegseis, W Meyer, BK
Citation: T. Suski et al., High pressure fabrication and processing of GaN : Mg, MAT SCI E B, 59(1-3), 1999, pp. 1-5
Raman studies of isotope effects in Si and GaAs
Authors: Widulle, F Ruf, T Gobel, A Silier, I Schonherr, E Cardona, M Camacho, J Cantarero, A Kriegseis, W Ozhogin, VI
Citation: F. Widulle et al., Raman studies of isotope effects in Si and GaAs, PHYSICA B, 263, 1999, pp. 381-383
Risultati: 1-8 |