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Results: 26-31/31
Authors:
Krost, A
Blasing, J
Lunenburger, M
Protzmann, H
Heuken, M
Citation: A. Krost et al., Evaluation of strain and In content in (InGaN/GaN) multiquantum wells by x-ray analysis, APPL PHYS L, 75(5), 1999, pp. 689-691
Authors:
Krost, A
Blasing, J
Heinrichsdorff, F
Bimberg, D
Citation: A. Krost et al., In enrichment in (In,Ga)As/GaAs quantum dots studied by high-resolution x-ray diffraction and pole figure analysis, APPL PHYS L, 75(19), 1999, pp. 2957-2959
Authors:
Eisele, H
Flebbe, O
Kalka, T
Preinesberger, C
Heinrichsdorff, F
Krost, A
Bimberg, D
Dahne-Prietsch, M
Citation: H. Eisele et al., Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots, APPL PHYS L, 75(1), 1999, pp. 106-108
Authors:
Strittmatter, A
Krost, A
Strassburg, M
Turck, V
Bimberg, D
Blasing, J
Christen, J
Citation: A. Strittmatter et al., Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer, APPL PHYS L, 74(9), 1999, pp. 1242-1244
Authors:
Goni, AR
Stroh, M
Thomsen, C
Heinrichsdorff, F
Turck, V
Krost, A
Bimberg, D
Citation: Ar. Goni et al., Lasing and electronic properties of a single InAs monolayer embedded in bulklike GaAs, REV MEX FIS, 44, 1998, pp. 154-157
Authors:
Heinrichsdorff, F
Grundmann, M
Stier, O
Krost, A
Bimberg, D
Citation: F. Heinrichsdorff et al., Influence of In/Ga intermixing on the optical properties of InGaAs/GaAs quantum dots, J CRYST GR, 195(1-4), 1998, pp. 540-545