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Results: 1-4 |
Results: 4
The role of hydrogen dilution of silane and phosphorus doping on hydrogenated microcrystalline silicon (mu c-Si : H) films prepared by hot-wire chemical vapor deposition (HW-CVD) technique
Authors: Jadkar, SR Sali, JV Takwale, MG Musale, DV Kshirsagar, ST
Citation: Sr. Jadkar et al., The role of hydrogen dilution of silane and phosphorus doping on hydrogenated microcrystalline silicon (mu c-Si : H) films prepared by hot-wire chemical vapor deposition (HW-CVD) technique, THIN SOL FI, 395(1-2), 2001, pp. 206-212
Synthesis of highly conductive boron-doped p-type hydrogenated microcrystalline silicon (mu c-Si : H)by a hot-wire chemical vapor deposition (HWCVD) technique
Authors: Jadkar, SR Sali, JV Takwale, MG Musale, DV Kshirsagar, ST
Citation: Sr. Jadkar et al., Synthesis of highly conductive boron-doped p-type hydrogenated microcrystalline silicon (mu c-Si : H)by a hot-wire chemical vapor deposition (HWCVD) technique, SOL EN MAT, 64(4), 2000, pp. 333-346
Control of crystallization at low thickness in mu c-Si : H films using layer-by-layer growth scheme
Authors: Jana, M Das, D Kshirsagar, ST Barua, AK
Citation: M. Jana et al., Control of crystallization at low thickness in mu c-Si : H films using layer-by-layer growth scheme, JPN J A P 2, 38(10A), 1999, pp. L1087-L1090
Enhancement of nucleation and growth of diamond films using In-Sn-O bufferlayer on Si substrate
Authors: Musale, DV Pai, MP Sainkar, SR Kshirsagar, ST
Citation: Dv. Musale et al., Enhancement of nucleation and growth of diamond films using In-Sn-O bufferlayer on Si substrate, MATER LETT, 39(2), 1999, pp. 86-90
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