Authors: Takashima, D Takeuchi, Y Miyakawa, T Itoh, Y Ogiwara, R Kamoshida, M Hoya, K Doumae, SM Ozaki, T Kanaya, H Yamakawa, K Kunishima, I Oowaki, Y

Citation: D. Takashima et al., A 76-mm(2) 8-Mb chain ferroelectric memory, IEEE J SOLI, 36(11), 2001, pp. 1713-1720

Authors: Morimoto, T Hidaka, O Yamakawa, K Arisumi, O Kanaya, H Iwamoto, T Kumura, Y Kunishima, I Tanaka, S

Citation: T. Morimoto et al., Ferroelectric properties of Pb(Zi, Ti)O-3 capacitor with thin SrRuO3 filmswithin both electrodes, JPN J A P 1, 39(4B), 2000, pp. 2110-2113

Authors: Ogiwara, R Tanaka, S Itoh, Y Miyakawa, T Takeuchi, Y Doumae, SM Takenaka, H Kunishima, I Shuto, S Hidaka, O Ohtsuki, S Tanaka, S

Citation: R. Ogiwara et al., A 0.5-mu m, 3-V, 1T1C, 1-Mbit FRAM with a variable reference bit-line voltage scheme using a fatigue-free reference capacitor, IEEE J SOLI, 35(4), 2000, pp. 545-551

Authors: Kanaya, H Iwamoto, T Takahagi, Y Kunishima, I Tanaka, S

Citation: H. Kanaya et al., Hydrogen induced imprint mechanism of PT/PZT/PT capacitor by low temperature hydrogen treatment, INTEGR FERR, 25(1-4), 1999, pp. 575-584

Authors: Takashima, D Shuto, S Kunishima, I Takenaka, H Oowaki, Y Tanaka, S

Citation: D. Takashima et al., A sub-40-ns chain FRAM architecture with 7-ns cell-plate-line drive, IEEE J SOLI, 34(11), 1999, pp. 1557-1563