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Results: 1-12 |
Results: 12
Pressure-controlled solution growth of bulk GaN crystals under high pressure
Authors: Inoue, T Seki, Y Oda, O Kurai, S Yamada, Y Taguchi, T
Citation: T. Inoue et al., Pressure-controlled solution growth of bulk GaN crystals under high pressure, PHYS ST S-B, 223(1), 2001, pp. 15-27
Growth of bulk GaN single crystals by the pressure-controlled solution growth method
Authors: Inoue, T Seki, Y Oda, O Kurai, S Yamada, Y Taguchi, T
Citation: T. Inoue et al., Growth of bulk GaN single crystals by the pressure-controlled solution growth method, J CRYST GR, 229(1), 2001, pp. 35-40
Growth of bulk GaN single crystals by the pressure-controlled solution growth method
Authors: Inoue, T Seki, Y Oda, O Kurai, S Yamada, Y Taguchi, T
Citation: T. Inoue et al., Growth of bulk GaN single crystals by the pressure-controlled solution growth method, JPN J A P 1, 39(4B), 2000, pp. 2394-2398
Optical properties of bound excitons and biexcitons in GaN
Authors: Yamada, Y Sasaki, C Yoshida, Y Kurai, S Taguchi, T Sugahara, T Nishino, K Sakai, S
Citation: Y. Yamada et al., Optical properties of bound excitons and biexcitons in GaN, IEICE TR EL, E83C(4), 2000, pp. 605-611
Developments of GaN bulk substrates for GaN based LEDs and LDs
Authors: Oda, O Inoue, T Seki, Y Wakahara, A Yoshida, A Kurai, S Yamada, Y Taguchi, T
Citation: O. Oda et al., Developments of GaN bulk substrates for GaN based LEDs and LDs, IEICE TR EL, E83C(4), 2000, pp. 639-646
Homoepitaxial growth of GaN thin layer by molecular beam epitaxy with an RF nitrogen plasma
Authors: Kubo, S Kurai, S Taguchi, T
Citation: S. Kubo et al., Homoepitaxial growth of GaN thin layer by molecular beam epitaxy with an RF nitrogen plasma, VACUUM, 59(1), 2000, pp. 277-283
GaN bulk substrates for GaN based LEDs and LDs
Authors: Oda, O Inoue, T Seki, Y Kainosho, K Yaegashi, S Wakahara, A Yoshida, A Kurai, S Yamada, Y Taguchi, T
Citation: O. Oda et al., GaN bulk substrates for GaN based LEDs and LDs, PHYS ST S-A, 180(1), 2000, pp. 51-58
Defect identification in homoepitaxial- and ELO-grown GaN layers using bound-exciton Zeeman spectroscopies
Authors: Kurai, S Yamada, Y Taguchi, T
Citation: S. Kurai et al., Defect identification in homoepitaxial- and ELO-grown GaN layers using bound-exciton Zeeman spectroscopies, J CRYST GR, 210(1-3), 2000, pp. 216-219
Excitonic emissions under high excitation of hexagonal GaN single crystal grown by sublimation method
Authors: Kurai, S Kawabe, A Sugita, T Kubo, S Yamada, Y Taguchi, T Sakai, S
Citation: S. Kurai et al., Excitonic emissions under high excitation of hexagonal GaN single crystal grown by sublimation method, JPN J A P 2, 38(2A), 1999, pp. L102-L104
Magneto-luminescence spectroscopy of excitonic transitions in homoepitaxial GaN layers
Authors: Yamada, Y Sasaki, C Yoshida, Y Kurai, S Taguchi, T Sugahara, T Nishino, K Sakai, S
Citation: Y. Yamada et al., Magneto-luminescence spectroscopy of excitonic transitions in homoepitaxial GaN layers, PHYS ST S-B, 216(1), 1999, pp. 27-30
Homoepitaxial growth and luminescence characterization of GaN epilayer by RF-MBE on MOCVD-grown GaN substrate
Authors: Kurai, S Kubo, S Okazaki, T Manabe, S Sugita, T Kawabe, A Yamada, Y Taguchi, T
Citation: S. Kurai et al., Homoepitaxial growth and luminescence characterization of GaN epilayer by RF-MBE on MOCVD-grown GaN substrate, PHYS ST S-A, 176(1), 1999, pp. 459-463
Time-resolved spectroscopy of excitonic luminescence from GaN homoepitaxial layers
Authors: Yamada, Y Sasaki, C Kurai, S Taguchi, T Sugahara, T Nishino, K Sakai, S
Citation: Y. Yamada et al., Time-resolved spectroscopy of excitonic luminescence from GaN homoepitaxial layers, J APPL PHYS, 86(12), 1999, pp. 7186-7188
Risultati: 1-12 |