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Results: 1
High speed growth of device quality GaN and InGaN by RF-MBE
Authors:
Kushi, K Sasamoto, H Sugihara, D Nakamura, S Kikuchi, A Kishino, K
Citation:
K. Kushi et al., High speed growth of device quality GaN and InGaN by RF-MBE, MAT SCI E B, 59(1-3), 1999, pp. 65-68
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