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Results:
1-7
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Results: 7
Authors:
Ohno, Y
Kuzuhara, M
Citation: Y. Ohno et M. Kuzuhara, Application of GaN-based heterojunction FETs for advanced wireless communication, IEEE DEVICE, 48(3), 2001, pp. 517-523
Authors:
Hori, Y
Kuzuhara, M
Ando, Y
Mizuta, M
Citation: Y. Hori et al., Analysis of electric field distribution in GaAs metal-semiconductor field effect transistor with a field-modulating plate, J APPL PHYS, 87(7), 2000, pp. 3483-3487
Authors:
Ando, Y
Contrata, W
Samoto, N
Miyamoto, H
Matsunaga, K
Kuzuhara, M
Kunihiro, K
Kasahara, K
Nakayama, T
Takahashi, Y
Hayama, N
Ohno, Y
Citation: Y. Ando et al., Gate length scaling for Al0.2Ga0.8N/GaN HJFETs: Two-dimensional full band Monte Carlo simulation including polarization effect, IEEE DEVICE, 47(10), 2000, pp. 1965-1972
Authors:
Itoh, Y
Kuzuhara, M
Citation: Y. Itoh et M. Kuzuhara, Foreword - Special issue on low Distortion technology for microwave devices and circuits, IEICE TR EL, E82C(5), 1999, pp. 677-678
Authors:
Takenaka, I
Takahashi, H
Asano, K
Ishikura, K
Morikawa, J
Tsutsui, H
Kuzuhara, M
Citation: I. Takenaka et al., Improved IMD characteristics in L/S-band GaAsFET power amplifiers by lowering drain bias circuit impedance, IEICE TR EL, E82C(5), 1999, pp. 730-736
Numerical modeling of an impinging and compressible dusted plasma jet controlled by a magnetic field
Authors:
Nishiyama, H
Kuzuhara, M
Solonenko, OP
Kamiyama, S
Citation: H. Nishiyama et al., Numerical modeling of an impinging and compressible dusted plasma jet controlled by a magnetic field, PLASMA CHEM, 19(3), 1999, pp. 363-381
Authors:
Takenaka, I
Ishikura, K
Takahashi, H
Asano, K
Morikawa, J
Satou, K
Kishi, K
Hasegawa, K
Tokunaga, K
Emori, F
Kuzuhara, M
Citation: I. Takenaka et al., L/S-band 140-W push-pull power AlGaAs/GaAs HFET's for digital cellular base stations, IEEE J SOLI, 34(9), 1999, pp. 1181-1187
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