Citation: V. Gopal et al., Strain relaxation and dislocation introduction in lattice-mismatched InAs/GaP heteroepitaxy, PHIL MAG A, 81(10), 2001, pp. 2481-2501
Citation: V. Gopal et al., Electrochemical capacitance voltage profiling of the narrow band gap semiconductor InAs, J ELEC MAT, 29(11), 2000, pp. 1333-1339
Authors:
Pillai, MR
Theiring, SC
Barnett, SA
Wessels, BW
Desikan, A
Kvam, EP
Citation: Mr. Pillai et al., Effect of Sb pre-deposition on the compositional profiles in MOVPE-grown InAsSb/InAs(111) multi-quantum wells, J CRYST GR, 208(1-4), 2000, pp. 79-84
Authors:
Gopal, V
Souw, V
Chen, EH
Kvam, EP
McElfresh, M
Woodall, JM
Citation: V. Gopal et al., Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP, J APPL PHYS, 87(3), 2000, pp. 1350-1355
Authors:
Souw, V
Gopal, V
Chen, EH
Kvam, EP
McElfresh, M
Woodall, JM
Citation: V. Souw et al., Growth temperature dependence of transport properties of InAs epilayers grown on GaP, APPL PHYS L, 77(8), 2000, pp. 1176-1178
Citation: V. Gopal et al., Behavior of a new ordered structural dopant source in InAs/(001) GaP heterostructures, J VAC SCI B, 17(4), 1999, pp. 1767-1772