Citation: T. Downarowicz et Y. Lacroix, ALMOST 1-1-EXTENSIONS OF FURSTENBERG-WEISS TYPE AND APPLICATIONS TO TOEPLITZ FLOWS, Studia Mathematica, 130(2), 1998, pp. 149-170
Authors:
GONG XY
YAMAGUCHI T
KAN H
MAKINO T
ROWELL NL
LACROIX Y
MANGYOU A
AOYAMA R
KUMAGAWA M
Citation: Xy. Gong et al., MIDINFRARED PHOTOLUMINESCENCE FROM LIQUID-PHASE EPITAXIAL INAS1-YSBY INAS MULTILAYERS/, JPN J A P 1, 36(2), 1997, pp. 738-742
Authors:
STAMOUR A
LIU CW
STURM JC
LACROIX Y
THEWALT MLW
Citation: A. Stamour et al., DEFECT-FREE BAND-EDGE PHOTOLUMINESCENCE AND BAND-GAP MEASUREMENT OF PSEUDOMORPHIC SI1-X-YGEXCY ALLOY LAYERS ON SI (100) (VOL 67, PG 3915, 1995), Applied physics letters, 68(8), 1996, pp. 1169-1169
Authors:
WATKINS SP
TRAN CA
SOERENSEN G
CHEUNG HD
ARES RA
LACROIX Y
THEWALT MLW
Citation: Sp. Watkins et al., CHARACTERIZATION OF VERY HIGH-PURITY INAS GROWN USING TRIMETHYLINDIUMAND TERTIARYBUTYLARSINE, Journal of electronic materials, 24(11), 1995, pp. 1583-1590
Authors:
STAMOUR A
LIU CW
STURM JC
LACROIX Y
THEWALT MLW
Citation: A. Stamour et al., DEFECT-FREE BAND-EDGE PHOTOLUMINESCENCE AND BAND-GAP MEASUREMENT OF PSEUDOMORPHIC SI1-X-YGEXCY ALLOY LAYERS ON SI(100), Applied physics letters, 67(26), 1995, pp. 3915-3917
Citation: A. Stamour et al., ENHANCEMENT OF HIGH-TEMPERATURE PHOTOLUMINESCENCE IN STRAINED SI1-XGEX SI HETEROSTRUCTURES BY SURFACE PASSIVATION/, Applied physics letters, 65(26), 1994, pp. 3344-3346
Citation: Jc. Sturm et al., DEEP PHOTOLUMINESCENCE IN SI SI1-XGEX/SI QUANTUM-WELLS CREATED BY ION-IMPLANTATION AND ANNEALING/, Applied physics letters, 64(17), 1994, pp. 2291-2293
Citation: F. Blanchard et Y. Lacroix, ZERO ENTROPY FACTORS OF TOPOLOGICAL FLOWS, Proceedings of the American Mathematical Society, 119(3), 1993, pp. 985-992