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Results: 1-16 |
Results: 16
ASSESSMENT OF CONDITIONS INFLUENCING POROUS SI ELECTROLUMINESCENCE
Authors: SEN S SIEJKA J SAVTCHOUK A LAGOWSKI J
Citation: S. Sen et al., ASSESSMENT OF CONDITIONS INFLUENCING POROUS SI ELECTROLUMINESCENCE, Journal of the Electrochemical Society, 144(6), 1997, pp. 2230-2233
SPIN-ON DOPING OF POROUS SILICON AND ITS EFFECT ON PHOTOLUMINESCENCE AND TRANSPORT CHARACTERISTICS
Authors: SEN S SIEJKA J SAVTCHOUK A LAGOWSKI J
Citation: S. Sen et al., SPIN-ON DOPING OF POROUS SILICON AND ITS EFFECT ON PHOTOLUMINESCENCE AND TRANSPORT CHARACTERISTICS, Applied physics letters, 70(17), 1997, pp. 2253-2255
ENHANCED HYDROGENATION IN POLYCRYSTALLINE SILICON THIN-FILMS USING LOW-TEMPERATURE ULTRASOUND TREATMENT
Authors: OSTAPENKO S JASTRZEBSKI L LAGOWSKI J SMELTZER RK
Citation: S. Ostapenko et al., ENHANCED HYDROGENATION IN POLYCRYSTALLINE SILICON THIN-FILMS USING LOW-TEMPERATURE ULTRASOUND TREATMENT, Applied physics letters, 68(20), 1996, pp. 2873-2875
ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF SE-DOPED ALSB - EVIDENCE FORNEGATIVE-U OF THE DX CENTER
Authors: STALLINGA P WALUKIEWICZ W WEBER ER BECLA P LAGOWSKI J
Citation: P. Stallinga et al., ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF SE-DOPED ALSB - EVIDENCE FORNEGATIVE-U OF THE DX CENTER, Acta Physica Polonica. A, 88(5), 1995, pp. 1043-1047
ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF SE-DOPED ALSB - EVIDENCE FORNEGATIVE-U OF THE DX-CENTER
Authors: STALLINGA P WALUKIEWICZ W WEBER ER BECLA P LAGOWSKI J
Citation: P. Stallinga et al., ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF SE-DOPED ALSB - EVIDENCE FORNEGATIVE-U OF THE DX-CENTER, Physical review. B, Condensed matter, 52(12), 1995, pp. 8609-8612
IMPROVEMENT OF DIFFUSION LENGTH IN POLYCRYSTALLINE PHOTOVOLTAIC SILICON BY PHOSPHORUS AND CHLORINE GETTERING
Authors: JASTRZEBSKI L HENLEY W SCHIELEIN D LAGOWSKI J
Citation: L. Jastrzebski et al., IMPROVEMENT OF DIFFUSION LENGTH IN POLYCRYSTALLINE PHOTOVOLTAIC SILICON BY PHOSPHORUS AND CHLORINE GETTERING, Journal of the Electrochemical Society, 142(11), 1995, pp. 3869-3872
LARGE PHOTOINDUCED PERSISTENT OPTICAL-ABSORPTION IN SELENIUM DOPED ALSB
Authors: BECLA P WITT A LAGOWSKI J WALUKIEWICZ W
Citation: P. Becla et al., LARGE PHOTOINDUCED PERSISTENT OPTICAL-ABSORPTION IN SELENIUM DOPED ALSB, Applied physics letters, 67(3), 1995, pp. 395-397
ENHANCEMENT OF ROOM-TEMPERATURE PHOTOLUMINESCENCE IN THIN-FILM POLYCRYSTALLINE SILICON PRODUCED BY LOW-POWER LASER ANNEALING
Authors: OSTAPENKO S SAVCHUK AU NOWAK G LAGOWSKI J HOFF AM
Citation: S. Ostapenko et al., ENHANCEMENT OF ROOM-TEMPERATURE PHOTOLUMINESCENCE IN THIN-FILM POLYCRYSTALLINE SILICON PRODUCED BY LOW-POWER LASER ANNEALING, Applied physics letters, 67(20), 1995, pp. 2942-2944
BAND-TAIL PHOTOLUMINESCENCE IN POLYCRYSTALLINE SILICON THIN-FILMS
Authors: SAVCHOUK AU OSTAPENKO S NOWAK G LAGOWSKI J JASTRZEBSKI L
Citation: Au. Savchouk et al., BAND-TAIL PHOTOLUMINESCENCE IN POLYCRYSTALLINE SILICON THIN-FILMS, Applied physics letters, 67(1), 1995, pp. 82-84
SEMICONDUCTOR SURFACE SPECTROSCOPIES - THE EARLY YEARS
Authors: LAGOWSKI J
Citation: J. Lagowski, SEMICONDUCTOR SURFACE SPECTROSCOPIES - THE EARLY YEARS, Surface science, 300(1-3), 1994, pp. 92-101
INCREASING SHORT MINORITY-CARRIER DIFFUSION LENGTHS IN SOLAR-GRADE POLYCRYSTALLINE SILICON BY ULTRASOUND TREATMENT
Authors: OSTAPENKO SS JASTRZEBSKI L LAGOWSKI J SOPORI B
Citation: Ss. Ostapenko et al., INCREASING SHORT MINORITY-CARRIER DIFFUSION LENGTHS IN SOLAR-GRADE POLYCRYSTALLINE SILICON BY ULTRASOUND TREATMENT, Applied physics letters, 65(12), 1994, pp. 1555-1557
EVIDENCE THAT BLUE LUMINESCENCE OF OXIDIZED POROUS SILICON ORIGINATESFROM SIO2
Authors: KONTKIEWICZ AJ KONTKIEWICZ AM SIEJKA J SEN S NOWAK G HOFF AM SAKTHIVEL P AHMED K MUKHERJEE P WITANACHCHI S LAGOWSKI J
Citation: Aj. Kontkiewicz et al., EVIDENCE THAT BLUE LUMINESCENCE OF OXIDIZED POROUS SILICON ORIGINATESFROM SIO2, Applied physics letters, 65(11), 1994, pp. 1436-1438
MONITORING OF HEAVY-METAL CONTAMINATION DURING CHEMICAL CLEANING WITHSURFACE PHOTOVOLTAGE
Authors: JASTRZEBSKI L MILIC O DEXTER M LAGOWSKI J DEBUSK D NAUKA K WITOWSKI R GORDON M PERSSON E
Citation: L. Jastrzebski et al., MONITORING OF HEAVY-METAL CONTAMINATION DURING CHEMICAL CLEANING WITHSURFACE PHOTOVOLTAGE, Journal of the Electrochemical Society, 140(4), 1993, pp. 1152-1159
IRON DETECTION IN THE PART PER QUADRILLION RANGE IN SILICON USING SURFACE PHOTOVOLTAGE AND PHOTODISSOCIATION OF IRON-BORON PAIRS
Authors: LAGOWSKI J EDELMAN P KONTKIEWICZ AM MILIC O HENLEY W DEXTER M JASTRZEBSKI L HOFF AM
Citation: J. Lagowski et al., IRON DETECTION IN THE PART PER QUADRILLION RANGE IN SILICON USING SURFACE PHOTOVOLTAGE AND PHOTODISSOCIATION OF IRON-BORON PAIRS, Applied physics letters, 63(22), 1993, pp. 3043-3045
METHOD FOR THE MEASUREMENT OF LONG MINORITY-CARRIER DIFFUSION LENGTHSEXCEEDING WAFER THICKNESS
Authors: LAGOWSKI J KONTKIEWICZ AM JASTRZEBSKI L EDELMAN P
Citation: J. Lagowski et al., METHOD FOR THE MEASUREMENT OF LONG MINORITY-CARRIER DIFFUSION LENGTHSEXCEEDING WAFER THICKNESS, Applied physics letters, 63(21), 1993, pp. 2902-2904
ENERGY-LEVELS OF THE SB(GA) HETEROANTISITE DEFECT IN GAASSB
Authors: LAGOWSKI J MORAWSKI A SEN S EDELMAN P
Citation: J. Lagowski et al., ENERGY-LEVELS OF THE SB(GA) HETEROANTISITE DEFECT IN GAASSB, Applied physics letters, 62(23), 1993, pp. 2968-2970
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