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Results: 1-25 | 26-30
Results: 1-25/30
INDUCTIVELY-COUPLED PLASMA ETCH PROCESSES FOR NIMNSB
Authors: HONG J CABALLERO JA LAMBERS ES CHILDRESS JR PEARTON SJ
Citation: J. Hong et al., INDUCTIVELY-COUPLED PLASMA ETCH PROCESSES FOR NIMNSB, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2153-2161
COMPARISON OF PLASMA CHEMISTRIES FOR DRY-ETCHING THIN-FILM ELECTROLUMINESCENT DISPLAY MATERIALS
Authors: LEE JW PATHANGEY B DAVIDSON MR HOLLOWAY PH LAMBERS ES DAVYDOV B ANDERSON TJ PEARTON SJ
Citation: Jw. Lee et al., COMPARISON OF PLASMA CHEMISTRIES FOR DRY-ETCHING THIN-FILM ELECTROLUMINESCENT DISPLAY MATERIALS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2177-2186
INDUCTIVELY-COUPLED PLASMA-ETCHING OF BULK 6H-SIC AND THIN-FILM SICN IN NF3 CHEMISTRIES
Authors: WANG JJ LAMBERS ES PEARTON SJ OSTLING M ZETTERLING CM GROW JM REN F SHUL RJ
Citation: Jj. Wang et al., INDUCTIVELY-COUPLED PLASMA-ETCHING OF BULK 6H-SIC AND THIN-FILM SICN IN NF3 CHEMISTRIES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2204-2209
COMPARISON OF PLASMA CHEMISTRIES FOR INDUCTIVELY-COUPLED PLASMA-ETCHING OF INGAALP ALLOYS
Authors: HONG J LEE JW ABERNATHY CR LAMBERS ES PEARTON SJ SHUL RJ HOBSON WS
Citation: J. Hong et al., COMPARISON OF PLASMA CHEMISTRIES FOR INDUCTIVELY-COUPLED PLASMA-ETCHING OF INGAALP ALLOYS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1497-1501
DEVELOPMENT OF ELECTRON-CYCLOTRON-RESONANCE AND INDUCTIVELY-COUPLED PLASMA HIGH-DENSITY PLASMA-ETCHING FOR PATTERNING OF NIFE AND NIFECO
Authors: JUNG KB LAMBERS ES CHILDRESS JR PEARTON SJ JENSON M HURST AT
Citation: Kb. Jung et al., DEVELOPMENT OF ELECTRON-CYCLOTRON-RESONANCE AND INDUCTIVELY-COUPLED PLASMA HIGH-DENSITY PLASMA-ETCHING FOR PATTERNING OF NIFE AND NIFECO, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1697-1701
ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING OF OXIDES AND SRS AND ZNS-BASED ELECTROLUMINESCENT MATERIALS FOR FLAT-PANEL DISPLAYS
Authors: LEE JW PATHANGEY B DAVIDSON MR HOLLOWAY PH LAMBERS ES DAVYDOV A ANDERSON TJ PEARTON SJ
Citation: Jw. Lee et al., ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING OF OXIDES AND SRS AND ZNS-BASED ELECTROLUMINESCENT MATERIALS FOR FLAT-PANEL DISPLAYS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1944-1948
INDUCTIVELY-COUPLED PLASMA-ETCHING OF INGAP, ALINP, AND ALGAP IN CL-2AND BCL3 CHEMISTRIES
Authors: HONG J LAMBERS ES ABERNATHY CR PEARTON SJ SHUL RJ HOBSON WS
Citation: J. Hong et al., INDUCTIVELY-COUPLED PLASMA-ETCHING OF INGAP, ALINP, AND ALGAP IN CL-2AND BCL3 CHEMISTRIES, Journal of electronic materials, 27(3), 1998, pp. 132-137
INDUCTIVELY-COUPLED PLASMA-ETCHING OF III-V SEMICONDUCTORS IN CL-2-BASED CHEMISTRIES
Authors: LEE JW LAMBERS ES ABERNATHY CR PEARTON SJ SHUL RJ REN F HOBSON WS CONSTANTINE C
Citation: Jw. Lee et al., INDUCTIVELY-COUPLED PLASMA-ETCHING OF III-V SEMICONDUCTORS IN CL-2-BASED CHEMISTRIES, Solid-state electronics, 42(5), 1998, pp. 65-73
HIGH-RATE ETCHING OF SIC AND SICN IN NF3 INDUCTIVELY-COUPLED PLASMAS
Authors: WANG JJ LAMBERS ES PEARTON SJ OSTLING M ZETTERLING CM GROW JM REN F
Citation: Jj. Wang et al., HIGH-RATE ETCHING OF SIC AND SICN IN NF3 INDUCTIVELY-COUPLED PLASMAS, Solid-state electronics, 42(5), 1998, pp. 743-747
CL-2-BASED INDUCTIVELY-COUPLED PLASMA-ETCHING OF NIFE AND RELATED MATERIALS
Authors: JUNG KB LAMBERS ES CHILDRESS JR PEARTON SJ JENSON M HURST AT
Citation: Kb. Jung et al., CL-2-BASED INDUCTIVELY-COUPLED PLASMA-ETCHING OF NIFE AND RELATED MATERIALS, Journal of the Electrochemical Society, 145(11), 1998, pp. 4025-4028
IC1 PLASMA-ETCHING OF III-V SEMICONDUCTORS
Authors: LEE JW HONG J LAMBERS ES PEARTON SJ
Citation: Jw. Lee et al., IC1 PLASMA-ETCHING OF III-V SEMICONDUCTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 652-656
COMPARISON OF DRY ETCH CHEMISTRIES FOR SIC
Authors: MCDANIEL G LEE JW LAMBERS ES PEARTON SJ HOLLOWAY PH REN F GROW JM BHASKARAN M WILSON RG
Citation: G. Mcdaniel et al., COMPARISON OF DRY ETCH CHEMISTRIES FOR SIC, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 885-889
DRY-ETCHING OF III-V SEMICONDUCTORS IN IBR AR ELECTRON-CYCLOTRON-RESONANCE PLASMAS/
Authors: LEE JW HONG J LAMBERS ES ABERNATHY CR PEARTON SJ HOBSON WS REN F
Citation: Jw. Lee et al., DRY-ETCHING OF III-V SEMICONDUCTORS IN IBR AR ELECTRON-CYCLOTRON-RESONANCE PLASMAS/, Journal of electronic materials, 26(5), 1997, pp. 429-435
COMPARISON OF DRY-ETCHING OF III-V SEMICONDUCTORS IN ICL AR AND IBR/AR ELECTRON-CYCLOTRON-RESONANCE PLASMAS/
Authors: LEE JW HONG J LAMBERS ES ABERNATHY CR PEARTON SJ HOBSON WS REN F
Citation: Jw. Lee et al., COMPARISON OF DRY-ETCHING OF III-V SEMICONDUCTORS IN ICL AR AND IBR/AR ELECTRON-CYCLOTRON-RESONANCE PLASMAS/, Journal of electronic materials, 26(11), 1997, pp. 1314-1319
PLASMA-ETCHING OF III-V SEMICONDUCTORS IN BCL3 CHEMISTRIES .1. GAAS AND RELATED-COMPOUNDS
Authors: LEE JW HONG J LAMBERS ES ABERNATHY CR PEARTON SJ HOBSON WS REN F
Citation: Jw. Lee et al., PLASMA-ETCHING OF III-V SEMICONDUCTORS IN BCL3 CHEMISTRIES .1. GAAS AND RELATED-COMPOUNDS, Plasma chemistry and plasma processing, 17(2), 1997, pp. 155-167
PLASMA-ETCHING OF III-V SEMICONDUCTORS IN BCL3 CHEMISTRIES .2. INP AND RELATED-COMPOUNDS
Authors: LEE JW HONG J LAMBERS ES ABERNATHY CR PEARTON SJ HOBSON WS REN F
Citation: Jw. Lee et al., PLASMA-ETCHING OF III-V SEMICONDUCTORS IN BCL3 CHEMISTRIES .2. INP AND RELATED-COMPOUNDS, Plasma chemistry and plasma processing, 17(2), 1997, pp. 169-179
DRY-ETCHING OF GASB AND INSB IN CH4 H-2 AR
Authors: MILEHAM JR LEE JW LAMBERS ES PEARTON SJ
Citation: Jr. Mileham et al., DRY-ETCHING OF GASB AND INSB IN CH4 H-2 AR, Semiconductor science and technology, 12(3), 1997, pp. 338-344
HIGH-RATE DRY-ETCHING OF NI0.8FE0.2 AND NIFECO
Authors: JUNG KB LAMBERS ES CHILDRESS JR PEARTON SJ JENSON M HURST AT
Citation: Kb. Jung et al., HIGH-RATE DRY-ETCHING OF NI0.8FE0.2 AND NIFECO, Applied physics letters, 71(9), 1997, pp. 1255-1257
HIGH-TEMPERATURE SURFACE DEGRADATION OF III-V NITRIDES
Authors: VARTULI CB PEARTON SJ ABERNATHY CR MACKENZIE JD LAMBERS ES ZOLPER JC
Citation: Cb. Vartuli et al., HIGH-TEMPERATURE SURFACE DEGRADATION OF III-V NITRIDES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3523-3531
CL-2 AR PLASMA-ETCHING OF BINARY, TERNARY, AND QUATERNARY IN-BASED COMPOUND SEMICONDUCTORS/
Authors: LEE JW HONG J ABERNATHY CR LAMBERS ES PEARTON SJ HOBSON WS REN F
Citation: Jw. Lee et al., CL-2 AR PLASMA-ETCHING OF BINARY, TERNARY, AND QUATERNARY IN-BASED COMPOUND SEMICONDUCTORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2567-2573
HIGH MICROWAVE-POWER ELECTRON-CYCLOTRON-RESONANCE ETCHING OF III-V SEMICONDUCTORS IN CH4 H-2/AR/
Authors: PEARTON SJ LEE JW LAMBERS ES MILEHAM JR ABERNATHY CR HOBSON WS REN F SHUL RJ
Citation: Sj. Pearton et al., HIGH MICROWAVE-POWER ELECTRON-CYCLOTRON-RESONANCE ETCHING OF III-V SEMICONDUCTORS IN CH4 H-2/AR/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 118-125
DRY-ETCHING OF INGAALP ALLOYS IN CL-2 AR HIGH ION DENSITY PLASMAS/
Authors: HONG J LEE JW LAMBERS ES ABERNATHY CR SANTANA CJ PEARTON SJ HOBSON WS REN F
Citation: J. Hong et al., DRY-ETCHING OF INGAALP ALLOYS IN CL-2 AR HIGH ION DENSITY PLASMAS/, Journal of electronic materials, 25(9), 1996, pp. 1428-1433
DRY-ETCHING OF INGAP AND ALINP IN CH4 H-2 AR
Authors: LEE JW PEARTON SJ SANTANA CJ LAMBERS ES ABERNATHY CR HOBSON WS REN F
Citation: Jw. Lee et al., DRY-ETCHING OF INGAP AND ALINP IN CH4 H-2 AR, Plasma chemistry and plasma processing, 16(3), 1996, pp. 365-378
COMPARISON OF DRY-ETCHING TECHNIQUES FOR INGAP, ALINP AND ALGAP
Authors: HONG J LEE JW SANTANA CJ ABERNATHY CR LAMBERS ES PEARTON SJ HOBSON WS REN F
Citation: J. Hong et al., COMPARISON OF DRY-ETCHING TECHNIQUES FOR INGAP, ALINP AND ALGAP, Solid-state electronics, 39(7), 1996, pp. 1109-1112
ROOM-TEMPERATURE OXIDATION OF NI(110) AT LOW AND ATMOSPHERIC OXYGEN PRESSURES
Authors: LAMBERS ES DYKSTAL CN SEO JM ROWE JE HOLLOWAY PH
Citation: Es. Lambers et al., ROOM-TEMPERATURE OXIDATION OF NI(110) AT LOW AND ATMOSPHERIC OXYGEN PRESSURES, Oxidation of metals, 45(3-4), 1996, pp. 301-321
Risultati: 1-25 | 26-30