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Results: 1-25 | 26-30 |
Results: 26-30/30
CL-2-BASED DRY-ETCHING OF GAAS, ALGAAS, AND GAP
Authors: LEE JW HONG J LAMBERS ES ABERNATHY CR PEARTON SJ HOBSON WS REN F
Citation: Jw. Lee et al., CL-2-BASED DRY-ETCHING OF GAAS, ALGAAS, AND GAP, Journal of the Electrochemical Society, 143(6), 1996, pp. 2010-2014
HIGH ION DENSITY PLASMA-ETCHING OF INGAP, ALINP, AND ALGAP IN CH4 H-2/AR/
Authors: LEE JW PEARTON SJ SANTANA CJ MILEHAM JR LAMBERS ES ABERNATHY CR REN F HOBSON WS
Citation: Jw. Lee et al., HIGH ION DENSITY PLASMA-ETCHING OF INGAP, ALINP, AND ALGAP IN CH4 H-2/AR/, Journal of the Electrochemical Society, 143(3), 1996, pp. 1093-1098
COMPARISON OF DRY-ETCHING TECHNIQUES FOR III-V SEMICONDUCTORS IN CH4 H-2/AR PLASMAS/
Authors: PEARTON SJ LEE JW LAMBERS ES ABERNATHY CR REN F HOBSON WS SHUL RJ
Citation: Sj. Pearton et al., COMPARISON OF DRY-ETCHING TECHNIQUES FOR III-V SEMICONDUCTORS IN CH4 H-2/AR PLASMAS/, Journal of the Electrochemical Society, 143(2), 1996, pp. 752-758
COMPARISON OF ICL AND IBR PLASMA CHEMISTRIES FOR ETCHING OF INGAALP ALLOYS
Authors: HONG J LEE JW LAMBERS ES ABERNATHY CR PEARTON SJ CONSTANTINE C HOBSON WS
Citation: J. Hong et al., COMPARISON OF ICL AND IBR PLASMA CHEMISTRIES FOR ETCHING OF INGAALP ALLOYS, Journal of the Electrochemical Society, 143(11), 1996, pp. 3656-3661
REACTION BETWEEN DIAMOND AND TITANIUM FOR OHMIC CONTACT AND METALLIZATION ADHESION LAYERS
Authors: VILJOEN PE LAMBERS ES HOLLOWAY PH
Citation: Pe. Viljoen et al., REACTION BETWEEN DIAMOND AND TITANIUM FOR OHMIC CONTACT AND METALLIZATION ADHESION LAYERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(5), 1994, pp. 2997-3005
Risultati: 1-25 | 26-30 |