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Results: 1-9 |
Results: 9
TEMPERATURE-DEPENDENCE OF THE RAMAN-SPECTRUM OF ALXGA1-XAS TERNARY ALLOYS
Authors: JIMENEZ J MARTIN E TORRES A LANDESMAN JP
Citation: J. Jimenez et al., TEMPERATURE-DEPENDENCE OF THE RAMAN-SPECTRUM OF ALXGA1-XAS TERNARY ALLOYS, Physical review. B, Condensed matter, 58(16), 1998, pp. 10463-10469
A NEW METHOD OR TEMPERATURE MAPPING ON GAAS FIELD-EFFECT TRANSISTORS
Authors: MARTINA E LANDESMAN JP BRAUN P FILY A
Citation: E. Martina et al., A NEW METHOD OR TEMPERATURE MAPPING ON GAAS FIELD-EFFECT TRANSISTORS, Microelectronics and reliability, 38(6-8), 1998, pp. 1245-1250
LOCAL CHANNEL TEMPERATURE-MEASUREMENTS ON PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS BY PHOTOLUMINESCENCE SPECTROSCOPY
Authors: LANDESMAN JP DEPRET B FILY A NAGLE J BRAUN P
Citation: Jp. Landesman et al., LOCAL CHANNEL TEMPERATURE-MEASUREMENTS ON PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS BY PHOTOLUMINESCENCE SPECTROSCOPY, Applied physics letters, 72(11), 1998, pp. 1338-1340
LOCAL STRESS MEASUREMENTS IN LATERALLY OXIDIZED GAAS ALXGA1-XAS HETEROSTRUCTURES BY MICRO-RAMAN SPECTROSCOPY/
Authors: LANDESMAN JP FIORE A NAGLE J BERGER V ROSENCHER E PUECH P
Citation: Jp. Landesman et al., LOCAL STRESS MEASUREMENTS IN LATERALLY OXIDIZED GAAS ALXGA1-XAS HETEROSTRUCTURES BY MICRO-RAMAN SPECTROSCOPY/, Applied physics letters, 71(17), 1997, pp. 2520-2522
RECONSTRUCTION AND CHEMICAL ORDERING AT THE SURFACE OF STRAINED (IN, GA) AS EPILAYERS
Authors: SAUVAGESIMKIN M GARREAU Y PINCHAUX R CAVANNA A VERON MB JEDRECY N LANDESMAN JP NAGLE J
Citation: M. Sauvagesimkin et al., RECONSTRUCTION AND CHEMICAL ORDERING AT THE SURFACE OF STRAINED (IN, GA) AS EPILAYERS, Applied surface science, 104, 1996, pp. 646-651
COMMENSURATE AND INCOMMENSURATE PHASES AT RECONSTRUCTED (IN,GA)AS(001) SURFACES - X-RAY-DIFFRACTION EVIDENCE FOR A COMPOSITION LOCK-IN
Authors: SAUVAGESIMKIN M GARREAU Y PINCHAUX R VERON MB LANDESMAN JP NAGLE J
Citation: M. Sauvagesimkin et al., COMMENSURATE AND INCOMMENSURATE PHASES AT RECONSTRUCTED (IN,GA)AS(001) SURFACES - X-RAY-DIFFRACTION EVIDENCE FOR A COMPOSITION LOCK-IN, Physical review letters, 75(19), 1995, pp. 3485-3488
PHOTOELECTRON-SPECTROSCOPY STUDY OF GA 3D AND AS 3D CORE LEVELS ON MBE-GROWN GAAS-SURFACES
Authors: LARIVE M JEZEQUEL G LANDESMAN JP SOLAL F NAGLE J LEPINE B TALEBIBRAHIMI A INDLEKOFER G MARCADET X
Citation: M. Larive et al., PHOTOELECTRON-SPECTROSCOPY STUDY OF GA 3D AND AS 3D CORE LEVELS ON MBE-GROWN GAAS-SURFACES, Surface science, 304(3), 1994, pp. 298-308
IN-SITU CORE-LEVEL PHOTOELECTRON-SPECTROSCOPY STUDY OF INDIUM SEGREGATION AT GAINAS GAAS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY/
Authors: LARIVE M NAGLE J LANDESMAN JP MARCADET X MOTTET C BOIS P
Citation: M. Larive et al., IN-SITU CORE-LEVEL PHOTOELECTRON-SPECTROSCOPY STUDY OF INDIUM SEGREGATION AT GAINAS GAAS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1413-1417
INDIUM SURFACE SEGREGATION IN STRAINED GAINAS QUANTUM-WELLS GROWN ON GAAS BY MBE
Authors: NAGLE J LANDESMAN JP LARIVE M MOTTET C BOIS P
Citation: J. Nagle et al., INDIUM SURFACE SEGREGATION IN STRAINED GAINAS QUANTUM-WELLS GROWN ON GAAS BY MBE, Journal of crystal growth, 127(1-4), 1993, pp. 550-554
Risultati: 1-9 |