A NEW METHOD OR TEMPERATURE MAPPING ON GAAS FIELD-EFFECT TRANSISTORS

In this paper, a method is described, how to apply the technique of sp atially resolved photoluminescence (PL) spectroscopy for the measureme nt of the local channel temperature in GsAs-based field effect transis tors. This spectroscopic technique uses a focused laser beam which sca ns directly the surface of a chip inside its package. The temperature is deduced from the corresponding wavelength shift of the PL peak. In the case of a typical heterostructure-based transistor (like the pseud omorphic high electron mobility transistors studied here) a spatial re solution of 1 mu m and a temperature resolution of +/- 1 degrees C is demonstrated. (C) 1998 Elsevier Science Ltd. All rights reserved.