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Results:
1-7
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Results: 7
Authors:
LANGE MD
STORM DF
COLE T
Citation: Md. Lange et al., MOLECULAR-BEAM EPITAXY OF INTLAS, Journal of electronic materials, 27(6), 1998, pp. 536-541
Authors:
MALENGREAU F
VERMEERSCH M
HAGEGE S
SPORKEN R
LANGE MD
CAUDANO R
Citation: F. Malengreau et al., EPITAXIAL-GROWTH OF ALUMINUM NITRIDE LAYERS ON SI(111) AT HIGH-TEMPERATURE AND FOR DIFFERENT THICKNESSES, Journal of materials research, 12(1), 1997, pp. 175-188
ULTRA-THIN ALAS FILMS ON GAAS(001) INVESTIGATED BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY
Authors:
GUYAUX JL
LAMBIN P
LANGE MD
SPORKEN R
THIRY PA
CAUDANO R
Citation: Jl. Guyaux et al., ULTRA-THIN ALAS FILMS ON GAAS(001) INVESTIGATED BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY, Applied surface science, 104, 1996, pp. 601-607
Authors:
WIJEWARNASURIYA PS
LANGE MD
SIVANANTHAN S
FAURIE JP
Citation: Ps. Wijewarnasuriya et al., ANALYSIS OF LOW DOPING LIMITATION IN MOLECULAR-BEAM EPITAXIALLY GROWNHGCDTE(211)B EPITAXIAL LAYERS, Journal of electronic materials, 24(9), 1995, pp. 1211-1218
Authors:
WIJEWARNASURIYA PS
LANGE MD
SIVANANTHAN S
FAURIE JP
Citation: Ps. Wijewarnasuriya et al., MINORITY-CARRIER LIFETIME IN INDIUM-DOPED HGCDTE(211)B EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 24(5), 1995, pp. 545-549
Authors:
GUYAUX JL
LANGE MD
SPORKEN R
THIRY PA
CAUDANO R
SENET P
LAMBIN P
Citation: Jl. Guyaux et al., INFLUENCE OF INTERFACIAL DISORDER ON THE ELECTRON-ENERGY-LOSS SPECTRUM OF ULTRA-THIN ALAS FILMS ON GAAS(001), Surface science, 328(3), 1995, pp. 566-570
Authors:
WIJEWARNASURIYA PS
LANGE MD
SIVANANTHAN S
FAURIE JP
Citation: Ps. Wijewarnasuriya et al., CARRIER RECOMBINATION IN INDIUM-DOPED HGCDTE(211)B EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 75(2), 1994, pp. 1005-1009
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1-7
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