AAAAAA

   
Results: 1-16 |
Results: 16
ROOM-TEMPERATURE MIGRATION OF ION-BEAM INJECTED POINT-DEFECTS IN CRYSTALLINE SILICON
Authors: PRIVITERA V COFFA S PRIOLO F LARSEN KK LIBERTINO S CARNERA A
Citation: V. Privitera et al., ROOM-TEMPERATURE MIGRATION OF ION-BEAM INJECTED POINT-DEFECTS IN CRYSTALLINE SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 9-13
TIME SCALES OF TRANSIENT ENHANCED DIFFUSION - FREE AND CLUSTERED INTERSTITIALS
Authors: COWERN NEB HUIZING HGA STOLK PA VISSER CCG DEKRUIF RCM LARSEN KK PRIVITERA V NANVER LK CRANS W
Citation: Neb. Cowern et al., TIME SCALES OF TRANSIENT ENHANCED DIFFUSION - FREE AND CLUSTERED INTERSTITIALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 14-18
THE DAMAGE RECOVERY AND ELECTRICAL ACTIVATION OF SHALLOW BORON IMPLANTS IN SILICON - THE EFFECTS OF HIGH-ENERGY IMPLANTS
Authors: LARSEN KK PRIVITERA V COFFA S PRIOLO F SPINELLA C SAGGIO M CAMPISANO SU
Citation: Kk. Larsen et al., THE DAMAGE RECOVERY AND ELECTRICAL ACTIVATION OF SHALLOW BORON IMPLANTS IN SILICON - THE EFFECTS OF HIGH-ENERGY IMPLANTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 139-143
TRAP-LIMITED MIGRATION OF SI SELF-INTERSTITIALS AT ROOM-TEMPERATURE
Authors: LARSEN KK PRIVITERA V COFFA S PRIOLO F CAMPISANO SU CARNERA A
Citation: Kk. Larsen et al., TRAP-LIMITED MIGRATION OF SI SELF-INTERSTITIALS AT ROOM-TEMPERATURE, Physical review letters, 76(9), 1996, pp. 1493-1496
INFLUENCE OF GRAIN-BOUNDARY SCATTERING IN THE INFRARED RESPONSE OF SILICIDE SCHOTTKY-BARRIER DIODES
Authors: ROCA E LARSEN KK KOLODINSKI S MERTENS R
Citation: E. Roca et al., INFLUENCE OF GRAIN-BOUNDARY SCATTERING IN THE INFRARED RESPONSE OF SILICIDE SCHOTTKY-BARRIER DIODES, Journal of applied physics, 79(8), 1996, pp. 4426-4430
CHARACTERIZATION OF C COIMPLANTED GEXSI1-X EPITAXIAL LAYERS FORMED BYHIGH-DOSE GE ION-IMPLANTATION IN (100)SI
Authors: LOMBARDO S LARSEN KK RAINERI V LAVIA F CAMPISANO SU LAGOMARSINO S KAZIMIROV A
Citation: S. Lombardo et al., CHARACTERIZATION OF C COIMPLANTED GEXSI1-X EPITAXIAL LAYERS FORMED BYHIGH-DOSE GE ION-IMPLANTATION IN (100)SI, Journal of applied physics, 79(7), 1996, pp. 3456-3463
HIGH-TEMPERATURE ANNEALING EFFECTS ON THE ELECTRICAL CHARACTERISTICS OF C IMPLANTED SI
Authors: LOMBARDO S CACCIATO A LARSEN KK RAINERI V LAVIA F PRIVITERA V CAMPISANO SU
Citation: S. Lombardo et al., HIGH-TEMPERATURE ANNEALING EFFECTS ON THE ELECTRICAL CHARACTERISTICS OF C IMPLANTED SI, Journal of applied physics, 79(7), 1996, pp. 3464-3469
MAGNETOTRANSPORT AND EXCHANGE COUPLING IN FE CR MULTILAYERS - EFFECTSOF ANNEALING AND ION IRRADIATION/
Authors: KORENIVSKI V RAO KV KELLY DM SCHULLER IK LARSEN KK BOTTIGER J
Citation: V. Korenivski et al., MAGNETOTRANSPORT AND EXCHANGE COUPLING IN FE CR MULTILAYERS - EFFECTSOF ANNEALING AND ION IRRADIATION/, Journal of magnetism and magnetic materials, 144, 1995, pp. 549-550
GROWTH OF EPITAXIAL BETA-FESI2 ON (100)SILICON USING FE-TI-SI DIFFUSION COUPLES
Authors: LARSEN KK TAVARES J BENDER H DONATON RA LAUWERS A MAEX K
Citation: Kk. Larsen et al., GROWTH OF EPITAXIAL BETA-FESI2 ON (100)SILICON USING FE-TI-SI DIFFUSION COUPLES, Journal of applied physics, 78(1), 1995, pp. 599-601
ELECTRICAL-TRANSPORT IN (100)COSI2 SI CONTACTS/
Authors: LAUWERS A LARSEN KK VANHOVE M VERBEECK R MAEX K VANROSSUM M VERCAEMST A VANMEIRHAEGHE R CARDON F
Citation: A. Lauwers et al., ELECTRICAL-TRANSPORT IN (100)COSI2 SI CONTACTS/, Journal of applied physics, 77(6), 1995, pp. 2525-2536
SECONDARY DEFECT ANNIHILATION IN ION-BEAM PROCESSED SIXGE1-X LAYERS USING TITANIUM SILICIDE
Authors: LARSEN KK LAVIA F LOMBARDO S RAINERI V CAMPISANO SU
Citation: Kk. Larsen et al., SECONDARY DEFECT ANNIHILATION IN ION-BEAM PROCESSED SIXGE1-X LAYERS USING TITANIUM SILICIDE, Applied physics letters, 67(20), 1995, pp. 2931-2933
INCREASE IN THE INFRARED RESPONSE OF SILICIDE SCHOTTKY-BARRIER DIODESBY GRAIN-BOUNDARY SCATTERING
Authors: ROCA E LARSEN KK KOLODINSKI S MERTENS R
Citation: E. Roca et al., INCREASE IN THE INFRARED RESPONSE OF SILICIDE SCHOTTKY-BARRIER DIODESBY GRAIN-BOUNDARY SCATTERING, Applied physics letters, 67(10), 1995, pp. 1372-1374
LOWERED INTERDIFFUSIVITY IN THIN AMORPHOUS NI-ZR FILMS WITH LARGE COMPOSITION GRADIENTS
Authors: BOTTIGER J CHECHENIN NG GREER AL KARPE N KROG JP LARSEN KK
Citation: J. Bottiger et al., LOWERED INTERDIFFUSIVITY IN THIN AMORPHOUS NI-ZR FILMS WITH LARGE COMPOSITION GRADIENTS, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 69(6), 1994, pp. 1083-1091
INCREASES IN GIANT MAGNETORESISTANCE BY ION IRRADIATION
Authors: KELLY DM SCHULLER IK KORENIVSKI V RAO KV LARSEN KK BOTTIGER J GYORGY EM VANDOVER RB
Citation: Dm. Kelly et al., INCREASES IN GIANT MAGNETORESISTANCE BY ION IRRADIATION, Physical review. B, Condensed matter, 50(5), 1994, pp. 3481-3484
ELECTRONIC TRANSPORT IN METALLIC IRON DISILICIDE
Authors: LARSEN KK VANHOVE M LAUWERS A DONATON RA MAEX K VANROSSUM M
Citation: Kk. Larsen et al., ELECTRONIC TRANSPORT IN METALLIC IRON DISILICIDE, Physical review. B, Condensed matter, 50(19), 1994, pp. 14200-14211
ON THE PHASE-FORMATION DURING ION-BEAM MIXING OF AL-TI
Authors: LARSEN KK SKOVMAND S KARPE N BOTTIGER J BORMANN R
Citation: Kk. Larsen et al., ON THE PHASE-FORMATION DURING ION-BEAM MIXING OF AL-TI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 390-393
Risultati: 1-16 |