Authors: KORSHUNOV FP LASTOVSKY SB TROSHCHINSKY VT

Citation: Fp. Korshunov et al., ANNEALING EFFECT ON THE TEMPERATURE-DEPEN DENCE OF THE BREAKDOWN VOLTAGE IN IRRADIATED SILICON P-N-JUNCTIONS, Doklady Akademii nauk BSSR, 39(3), 1995, pp. 35-38