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SELECTIVE GROWTH OF GAAS AND AL0.35GA0.65AS ON GAAS PATTERNED SUBSTRATES BY HCL ASSISTED LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY
Authors: NATAF G LEROUX M LAUGT SM GIBART P
Citation: G. Nataf et al., SELECTIVE GROWTH OF GAAS AND AL0.35GA0.65AS ON GAAS PATTERNED SUBSTRATES BY HCL ASSISTED LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 165(1-2), 1996, pp. 1-7
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