SELECTIVE GROWTH OF GAAS AND AL0.35GA0.65AS ON GAAS PATTERNED SUBSTRATES BY HCL ASSISTED LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY

Citation
G. Nataf et al., SELECTIVE GROWTH OF GAAS AND AL0.35GA0.65AS ON GAAS PATTERNED SUBSTRATES BY HCL ASSISTED LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 165(1-2), 1996, pp. 1-7
Citations number
19
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
165
Issue
1-2
Year of publication
1996
Pages
1 - 7
Database
ISI
SICI code
0022-0248(1996)165:1-2<1:SGOGAA>2.0.ZU;2-Q
Abstract
The selective epitaxy of GaAs and (Al,Ga)As on a patterned substrate h as been achieved using HCl in the vapour phase. As a first approach, H Cl assisted growth of GaAs and Al0.35Ga0.65As on GaAs free and stripe patterned substrates has been performed. In addition to the expected a nisotropic growth, a strong enhancement of the growth rate was observe d. The relation between electronic quality of grown materials and Cl/( Al + Ga) ratios in the vapour phase studied using low temperature phot oluminescence and Hall effect measurements shows that slight amounts o f HCl in the vapour phase lead to improved GaAs and (Al,Ga)As layers. The solid composition of (Al,Ga)As alloys presents a strong dependence upon Cl/(AI + Ga) ratios, correlated to the competition between alumi nium and gallium chlorides formation in the vapour phase. A thermodyna mic analysis of the vapour phase, assuming equilibrium conditions is p resented.