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Results:
1-7
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Results: 7
Authors:
LAUX SE
Citation: Se. Laux, ON PARTICLE-MESH COUPLING IN MONTE-CARLO SEMICONDUCTOR-DEVICE SIMULATION, IEEE transactions on computer-aided design of integrated circuits and systems, 15(10), 1996, pp. 1266-1277
Authors:
STERN F
LAUX SE
KUMAR A
Citation: F. Stern et al., MODELING EFFECTS OF FOCUSED ION-BEAMS, Solid-state electronics, 40(1-8), 1996, pp. 523-525
Authors:
FISCHETTI MV
LAUX SE
Citation: Mv. Fischetti et Se. Laux, BAND-STRUCTURE, DEFORMATION POTENTALS, AND CARRIER MOBILITY IN STRAINED SI, GE, AND SIGE ALLOYS, Journal of applied physics, 80(4), 1996, pp. 2234-2252
Authors:
FISCHETTI MV
LAUX SE
CRABBE E
Citation: Mv. Fischetti et al., UNDERSTANDING HOT-ELECTRON TRANSPORT IN SILICON DEVICES - IS THERE A SHORTCUT, Journal of applied physics, 78(2), 1995, pp. 1058-1087
Authors:
ABRAMO A
BAUDRY L
BRUNETTI R
CASTAGNE R
CHAREF M
DESSENNE F
DOLLFUS P
DUTTON R
ENGL WL
FAUQUEMBERGUE R
FIEGNA C
FISCHETTI MV
GALDIN S
GOLDSMAN N
HACKEL M
HAMAGUCHI C
HESS K
HENNACY K
HESTO P
HIGMAN JM
IIZUKA T
JUNGEMANN C
KAMAKURA Y
KOSINA H
KUNIKIYO T
LAUX SE
LIM HC
MAZIAR C
MIZUNO H
PEIFER HJ
RAMASWAMY S
SANO N
SCORBOHACI PG
SELBERHERR S
TAKENAKA M
TANG TW
TANIGUCHI K
THOBEL JL
THOMA R
TOMIZAWA K
TOMIPZAWA M
VOGELSANG T
WANG SL
WANG XL
YAO CS
YODER PD
YOSHII A
Citation: A. Abramo et al., A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1646-1654
Authors:
KUMAR A
LAUX SE
STERN F
ZASLAVSKY A
HONG JM
SMITH TP
Citation: A. Kumar et al., EFFECT OF NONEQUILIBRIUM DEEP DONORS IN HETEROSTRUCTURE MODELING, Physical review. B, Condensed matter, 48(7), 1993, pp. 4899-4902
Authors:
FRANK DJ
LAUX SE
FISCHETTI MV
Citation: Dj. Frank et al., IIA-7 MONTE-CARLO SIMULATIONS OF P-CHANNEL AND N-CHANNEL DUAL-GATE SIMOSFETS AT THE LIMITS OF SCALING, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2103-2103
Risultati:
1-7
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