MODELING EFFECTS OF FOCUSED ION-BEAMS

Authors
STERN F LAUX SE KUMAR A
Citation
F. Stern et al., MODELING EFFECTS OF FOCUSED ION-BEAMS, Solid-state electronics, 40(1-8), 1996, pp. 523-525
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
40
Issue
1-8
Year of publication
1996
Pages
523 - 525
Database
ISI
SICI code
0038-1101(1996)40:1-8<523:MEOFI>2.0.ZU;2-B
Abstract
A zero-order model is used to estimate the effects associated with foc used ion beams. We assume that the energetic ions introduce electronic states at a fixed distance from the surface and at a single energy. L ateral and vertical straggle are ignored. Effects of implant depth and implant dose are investigated and results for carrier depletion at th e edge of an implanted sheet and for antidot structures are presented. Some results are for GaAs/AlGaAs heterostructures and some are for Si Ge heterostructures.